RFP8N20L INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 8A, 200V
  • r DS(ON) = 0.600Ω
  • Design Optimized for 5V Gate Drives
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits
  • Compatible with Automotive Drive Requirements
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedence
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

RFP8N20L TO-220AB RFP8N20L NOTE: When ordering, include the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet July 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP8N20L UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 200 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA 1-2 V Zero Gate Voltage Drain Current I DSS VDS = 0.8 x Rated BVDSS TC = 25oC- - 1 µA VDS = 0.8 x Rated BVDSS TC = 125oC- -5 0 µA Gate to Source Leakage Current I GSS VGS = 10V, VDS = 0 - - 100 nA Drain to Source On-Voltage (Note 2) V DS(ON) ID = 8A, VGS = 5V - - 4.8 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 5V - - 0.600 Ω Turn On Delay Time t d(ON) ID = 4A, VDD = 50V, RG = 6.25 , VGS = 5V - 15 45 ns Rise Time t r - 45 150 ns Turn Off Delay Time t d(OFF) - 100 135 ns Fall Time t f - 60 105 ns Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz - - 900 pF Output Capacitance C OSS - - 250 pF Reverse Transfer Capacitance C RSS - - 120 pF Thermal Resistance Junction to Case R θJC RFP8N20L 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 4A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 250 - ns NOTES: 2. Pulsed: pulse duration = 300µs max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP8N20L

FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS

600 C ISS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

1130 Brussels, Belgium

FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS