RFG70N06 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 70A, 60V
  • r DS(on) = 0.014Ω
  • Temperature Compensated PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve (Single Pulse)
  • +175 oC Operating Temperature

Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in appli- cations such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007. Symbol PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S70N06SM TO-263AB F1S70N06 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. G D S Absolute Maximum RatingsTC = +25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM UNITS Drain Current Refer to Peak Current Curve A Power Dissipation 150 1.0 W W/oC December 1995 File Number 3206.3

Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Electrical SpecificationsTC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 60V, VGS = 0V TC = +25oC- - 1 µA TC = +150oC- - 5 0 µA Gate-Source Leakage Current I GSS VGS =±20V - - 100 nA On Resistance r DS(ON) ID = 70A, VGS = 10V - - 0.014 Ω Turn-On Time t ON VDD = 30V, ID = 70A R L = 0.43Ω , VGS = +10V R GS = 2.5Ω - - 125 ns Turn-On Delay Time t D(ON) -1 2-n s Rise Time t R -5 0-n s Turn-Off Delay Time t D(OFF) -4 0-n s Fall Time t F -1 5-n s Turn-Off Time t OFF - - 125 ns Total Gate Charge Q G(TOT) VGS = 0V to 20V VDD = 48V, ID = 70A, R L = 0.68Ω - 185 215 nC Gate Charge at 10V Q G(10) VGS = 0V to 10V - 100 115 nC Threshold Gate Charge Q G(TH) VGS = 0V to 2V - 5.5 6.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V f = 1MHz - 3000 - pF Output Capacitance C OSS - 900 - pF Reverse Transfer Capacitance C RSS - 300 - pF Thermal Resistance Junction to Case R θJC - - 1.0 oC/W Thermal Resistance Junction to Ambient R θJA -- 8 0 oC/W Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD ISD = 70A - - 1.5 V Reverse Recovery Time t RR ISD = 70A, dISD /dt = 100A/µs - - 125 ns

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 4. PEAK CURRENT CAPABILITY FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

175 T C–

FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA- FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

Temperature Compensated PSPICE Model for the RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM .SUBCKT RFG70N06 2 1 3 ; rev 3/20/92 CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 31 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 18.2 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 17 18 RDRAIN ESCL RSCL1RSCL2 RLGATE RLDRAIN RLSOURCE RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM