RFP70N03 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor RFP70N03
- FEATURES
- WithTO-220 packaging
- Lowswitching loss
- Ultralow gate charge
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- Switching applications
- AC-DCconverters
- LEDlighting
- Uninterruptiblepower supply
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 30 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 70 A IDM DrainCurrent-SinglePulsed 200 A PD TotalDissipation 150 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.59 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor RFP70N03 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 30 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=70A 10 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=30V;VGS=0V;Tj=25℃ VDS=30V;VGS=0V;Tj=150℃ 50 μA VSDF Diodeforwardvoltage ISD=70A,VGS =0V 1.5 V