RFP70N03 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 70A, 30V
  • r DS(ON) = 0.010Ω
  • Temperature Compensating PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve (Single Pulse)
  • +175 oC Operating Temperature

Description

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan- nel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approach- ing those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regula- tors, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49025. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFP70N03 TO-220AB RFP70N03 RF1S70N03 TO-262AA F1S70N03 RF1S70N03SM TO-263AB F1S70N03 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N03SM9A. File Number 3404.2

Specifications RFP70N03, RF1S70N03, RF1S70N03SM Electrical SpecificationsAt Case Temperature (TC ) = +25oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 30 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA2 - 4 V Zero Gate Voltage Drain Current I DSS VDS =30V T C = 25oC- - 1 µA VGS = 0V T C = 150oC- - 5 0 µA Gate-Source Leakage Current I GSS VGS = ±20V - - 100 nA On Resistance r DS(ON) ID = 70A, VGS = 10V - - 0.010 Ω Turn-On Time t ON VDD = 15V, ID = 70A - - 80 ns Turn-On Delay Time t D(ON) R L = 0.214Ω , VGS = +10V - 20 - ns Rise Time t R RGS = 2.5Ω -2 0-n s Turn-Off Delay Time t D(OFF) -4 0-n s Fall Time t F -2 5-n s Turn-Off Time t OFF - - 125 ns Total Gate Charge Q G(TOT) VGS = 0 to 20V V DD = 24V, ID = 70A, RL = 0.343Ω - 215 260 nC Gate Charge at 10V Q G(10) VGS = 0 to 10V - 120 145 nC Threshold Gate Charge Q G(TH) VGS = 0 to 2V - 6.5 8.0 nC Input Capacitance C ISS VDS = 25V, VGS = 0V - 3300 - pF Output Capacitance C OSS f = 1MHz - 1750 - pF Reverse Transfer Capacitance C RSS - 750 - pF Thermal Resistance Junction to Case RθJC - - 1.0 oC/W Thermal Resistance Diode Junction to Ambient RθJA -- 8 0 oC/W Source-Drain Diode Ratings and Specifications PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Diode Forward Voltage V SD ISD = 70A - - 1.5 V Reverse Recovery Time t RR ISD = 70A, dISD /dt = 100A/µs - - 125 ns

PSPICE Model for the RFP70N03, RF1S70N03, RF1S70N03SM .SUBCKT RFP70N03 2 1 3 ; rev 9/16/92 *NOM TEMP = 25 oC CA 12 8 6.09e-9 CB 15 14 6.05e-9 CIN 6 8 3.40e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 35.4 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 30.7e-6 RGATE 9 20 0.890 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBKMOD D (RS=3.9e-2 TRS1=1.05e-4 TRS2=3.11e-5) .MODEL DPLCAPMOD D (CJO=4.8e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=3.46 KP=47 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=8.46e-4 TC2=-8.48e-7) .MODEL RDSMOD RES (TC1=2.23e-3 TC2=6.56e-6) .MODEL RVTOMOD RES (TC1=-3.29e-3 TC2=3.49e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8.35 VOFF=-6.35) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.35 VOFF=-8.35) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=3.0) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.0 VOFF=-2.0) .ENDS NOTE: For further discussion of the PSPICE model consultA New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. DPLCAP RDRAIN DBREAK LDRAIN DRAIN SOURCE LSOURCE DBODY RBREAK RVTO VBAT 19IT RSOURCE EBREAK MOS2 EDSEGS RIN CIN VTO ESG S1A S2A S2BS1B CBCA EVTO RGATE GATE LGATE 1817 2091 12 15 13 + + - MOS1 8 17 RFP70N03, RF1S70N03, RF1S70N03SM