RFP6P08

RFM6P08 ETC | Alldatasheet

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G E SOLID STATE Ol DE 3875081 ooL1eees o | Sue 38/5081 GE SOLID STATE O1E 18225 D7=39~2/ Standard Power MOSFETs EE . RFM6P08, RFM6P10, RFPGP08, RFP6P10 File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 5 6A, 80V—100V fos(on) = 0.62 | Features:

8 SOA is power-dissipation limited

“m Nanosecond switching speeds ® ® Linear transfer characteristics ‘s2c8-ses08 & High input impedance § Majority carrier device P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS ReMePoB RFMOPIO source (Lane) The RFM6P08 and RFM6P10 and the RFP6PO8 and 1) RFP6P10° are P-Channel enhancement-mode silicon-gate © power field-effect transistors designed for high-speed appli- eo cations such as switching regulators, switching converters, care relay drivers, and drivers for high-power bipolar ‘switching 92¢8-37801 transistors, JEDEC TO-204AA The RFM-Serles types are supplied in the JEDEC TO- ‘RFP6POS 204AA metal package and the RFP-Series types in the RFP6PIO source JEDEC TO-220AB plastic package. All these types are — supplied without an internal gate Zener diode. cette | _——— — LANGE)—e] || C DRAIN “The RFM and RFP series were formerly RCA developmental Y _—____ ‘numbers TA84D8 and TASOT, respectively. ‘TOP VIEW ‘GATE JEDEC TO-22088 . REM6PO8 RFM6PIO RFP6POB REPGP1O DRAIN-GATE VOLTAGE (Rys"1 MQ) ... Voor 80 100 80 100 v Derate above To=25C as 06 048 04s wre OPERATING AND STORAGE TEMPERATURE «...csssscscsseees TeTyy 9 == stor eg t

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RFMG6P08, RFM6P10, RFP6P08, RFP6P10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)}=25°C unless otherwise specitiod. LIMITS TEST ‘RFMOPOR REMGP1O CHARACTERISTICS SYMBOL | conpiTIONS REP6PO8 UNITS MIN. | MAX. | MIN. [MAX | fost Gale Threshold Voltage Vesith) Ves=V = 4 * Se ae | Zero Gate Voltage Drain Current Vos=-65 V [ i | = Vos=-80 V 1 Te=125°C uA Vos=-65 V Vos=~80 V Drain-Source On Voltage Vos(on)* 1o=3 A Ves==10 V v 1o=6 A 6 Vos==10V Vas=-10 V_ Forward Transconductance Vos=10 V [omeTeneniee Pe = | [ Output Capacitance | Cm | Vea | 350 [=| 350} pF f= MH; Ee a Turn-On Delay Time | taton) “| Veo= 80 | initypy| 60 | anitypy | 60 —] lo=3A 48\\typ)| 100 | 48(typ) | 100_| Turn-Off Delay Time Froen*Fex=500 | 102(typ)| 150 | 702(typ) |_150_| [atime Vest rorya) 00 Tro ee ‘Thermal Resistance RFM6P08, 1.867 1.67 Junction-to-Case REM6P10° ° REPGPOB, ow RFP6P10 “Pulsed: Pulse duration = 300 ys max., duty cycle = 2%, ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST RFM6P08- RFEM6P10 UNITS CONDITIONS RFPSPOB RFPGPi0 | min. | MAX. |" MIN. | MAX. | | Blode Forward Vonage [Ven | tee} ta f= | nae “Pulse Test: Width = 300 ys, duly cycle = 29%, = 169 ee

2? I G E SOLID STATE Ol De 3a7soa1 an3ee 4 : ver veer @ & SULIU STATE OTE 182270 U TB 9-D] Standard Power MOSFETs Se RFM6P08, RFM6P10, RFPG6P08, RFP6P10 of (CURVES musT BE CERATEO © FSEhE pss eect aida aes Set eee eee eat ~ ce feces See Sty S pppeppraarrs cette i [NPS Shot Geli Ease tH

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oss an cov (erros, nrreroe) gia) as 1 oF a eee a Loe eee SRAN=TO-SCURCE WOLTAGE (Vos)—¥ Fig. 1 — Maximum safe operating areas for all. types. een aeie ERE aretenTE REE [seine FE SE RE Seas vere FEI sy eS awcroneureenae tae Fig. 2 ~ Powor dissipation vs. omperature derating curve Fig. 3 — Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. soronReurenaane 4) care To sunce veusae (vgs) ty Fig. 4 — Normalized drain-to-source on resistance to | junction Fig. 5 — Typical transfer characteristics for all types. temperature for all types,

G & SOLID STATE OL Def 3a7soa1 oo1azea b § ’ 3875081 G E SOLID STATE oe o1E 18228 0 1739-2) : — Standard Power MOSFETs RFM6P08, RFM6P10, RFP6P08, RFP6P10 Y s:ss:. case TeurenaTne ce) ee HEH EEH EEE Fig. 6- wopmelized. | switching waveforms for constant gate-current Fig. 7 — Typical saturation characteristics for all types. ve. Ee emt Para aie ram faa eater tole Shawnee vases tg sesso eres Fig. 8 — Typical drain-to-source on resistance as @ function Fig. 9 — Capacitance asa function of drain-to-source OF eran curent for all types. voltage fore types. aim tom tnt at) ee moe seee-sten Fig. 10 — Typical forward transconductance as a function Fig, 11 - Switching Time Test Circult. ofdrain curent for types. an

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RFM8P08, RFM8P10, RFPSP08, RFP8P10 File Number 1496 P-Channel Enhancement-Mode Power Field-Effect Transistors ° 8A, -80 V and -100 V . tos(on) = 0.4 ‘ Features: . i ™ SOA is power-dissipation limited '™ Nanosecond switching speeds Ld © Linear transfer characteristics s2es-s6a8 § High input impedance ® Majority carrier device P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFMSPO8- RFMOPTO source (cance) The RFM8P08 and RFM8P10 and the RFP8P08 and © RFPSP10° are p-channel enhancement-mode silicon-gate care power field-effect transistors designed for applications such 92cs-37801 as switching regulators, switching converters, motor driv- MJEDEC TO-204AA ers, relay drivers, and drivers for high-power bipolar switch- ing transistors requiring high speed and low gate-drive RFPSPO8 Power. These types can be operated directly from inte- RFPEPIO ‘SOURCE . grated circuits. peal —=j The RFM-types are supplied in the JEDEC TO-204AA steel (FLANGED lax ‘RAIN package and the RFP-types in the JEDEC TO-220A8 plastic CTT 0- ]S=5 ie ne "The AFM and AFP series were formerly RCA developmental TOP ViEW nce-asne ‘numbers TAQ410 and TAS411, respectively. eoec To-a008 RFM8P08 RFM8P10 RFP8PO8 RFPSP10 DRAIN-GATE VOLTAGE (Rg=1 MQ) .... Voor 80 100 80 100 v Pulsed ..-..sseeeeeeee tom | 20 es A Derate above To=25*C o8 08 08 os wre OPERATING AND STORAGE . . YT

GE SOLID STATE a1 ve Wsa7soe. 00146230 4 i : , 3875081 G E SOLID STATE o1€ 18230 o T-39-2) — . Standard Power. a8 ~ RFM8P08, RFM8P10, RFP8P08, RFP8P10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Te)=25°C unless otherwise spocified. LIMITS TEST RFM8P08 RFM8P10 CHARACTERISTICS SYMBOL | CONDITIONS RFPSPO8 RFPSP10 | | MIN. | MAX. |" MIN. | MAX. | Vas=0 fort mA Zero Gate Voltage Drain Current Vos=-65 V _ Te=125°C uA Vos=-65 V Vos=-80V jeeet0V v lo=BA =40 ~40 ‘Static Drain-Source On Resistance [Siaiereinsouce onFesstice | raorit | erty [| — | # | = | # [8 | a A Toma A [inputGapacitance | Cas | (Vs25V0 | | t500 [| = | 1500 | [Output Capacitance ws | | Voss =| oo (| 700 | Reverse Transfer Capacitance f=imHz [7 = | 240 [= [240 | [Turn-On Delay Time | taton) | Vo =50V | t8(typ) |__60_| 18(typ) | 60 | [RiseTime Tt lod A | zortyp) | 150 | 7o(typ) | 160 | | Turn-Off Delay Time | tafoft) | Reen=Rar=500 | t66(typ) |_275 | 166(typ) |_275_ | |FaTime Tt | Vose-t0v | 4typ) | 175 | o4ityp) | 175 | Thermal Resistance RFMEPO8, 1.25 RFPEPIO, 167 “Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST FFMEPOS REMEPTO CHARACTERISTIC SYMBOL | CONDITIONS RFPSPIO [Baierowed vais | Ve [ieee = a f= [Renee Recomm TE enrtionas | OP Lr | dir/c = 100A/ps: : “Pulse Test: Width = 800 ys, Duty Cycle = 2%, ce

G E SOLID STATE O1 DEG} 3875081 0024231 & i "78081 GE SoLiO State te 19231 oo -T°39°2Z!) Standard Power MOSFETs 7 T'39:'2Z3 RFM8P08, RFM&8P10, RFP8P08, RFP&P10 100.) case TEMPERATURE (Te) -25°¢ BREE eS Sa [2] Yoss (MAN 100 v nFMeiornFPerio~ [i LE Mt Hel eal “4 “10 “00 “00 ORAN-TO-SOURCE VOLTAGE (Vos) ecearsnt Fig. 1 — Maximum operating areas for all types. en ae weil Saal ee ace oe hoe rewenaTnet)—e soon Wercnaone Fig. 2 ~ Power dissipation vs. case temperature derating Fig. 3 — Typical normalized gate threshold voltage as a function ure for al ype function temperature for all ypes. “ancrion Texpanstene le ure=ro-sounce vo. eg Fig. 4— Normalized drain-to-source on resistance to junction Fig. 6 ~ Typical transfor cheractorsties for ell ypes, temporature for al types, 174 renee

G E SOLID STATE ee ox de 9.387508. oovseae 3 Bf : 3875081 G E SOLID STATE _ O1E 18232) D-T=F9-2/ RFM6P08, RFMSP10, RFP8P08, RFPSP10__ Fig. 6- Normaizod switching waveforms forconstent gate-current Fig. 7 — Typical saturation characteristics forall typos. ve. fa RUNS TRTHAGTTT Se ee ee | Sut unten oe a Fig. 8 ~ Typical drain-to-source on resistance as function Fig. 9— Capacttanco asa function of eran-o-vource at eran curont oral yeas voleg ora pes. oFEEEEEEEEE FES HEE Hee Sere EEE 1 ) vo score |- EMM ies cciercrnae uuinitinineiai atti q Ce Mctieeeieieeauacrteeeieeneecee eae Lo--W____t wear Fig, 10— Typical trward transconductance as functton Fig. 11 — Switohing Tne Test Crcut of drain current for all types.