RFP6P08 INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • -6A, -80V and -100V
  • r DS(ON) = 0.600Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN DRAIN GATE (FLANGE) Data Sheet October 1999 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP6P08 RFP6P10 UNITS Continuous Drain Current Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFP6P08 -80 - - V RFP6P10 -100 - - V Gate Threshold Voltage V GS(TH) VGS = VDS, ID = 250µA (Figure 7) -2 - -4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS -- 1 µA VDS = 0.8 x Rated BVDSS (TC = 125oC) - - 25 µA Gate to Source Leakage Current I GSS VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 6A, VGS = -10V (Figures 5, 6) - - 0.6 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 6A, VGS = -10V - - -3.6 V Turn-On Delay Time t d(ON) VDD = 50V, ID ≈ 6A RG = 50Ω, RL = 16Ω VGS = -10V (Figures 13, 14) -1 1 6 0 n s Rise Time t r - 48 100 ns Turn-Off Delay Time t d(OFF) - 102 150 ns Fall Time t f - 70 100 ns Input Capacitance C ISS VDS = 25V VGS = 0V f = 1MHz (Figure 8) - - 800 pF Output Capacitance C OSS - - 350 pF Reverse-Transfer Capacitance C RSS - - 150 pF Thermal Resistance Junction to Case R θJC RFP6P08, RFP6P10 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -3A - - -1.4 V Reverse Recovery Time t rr ISD = 4A, dlSD/dt = 50A/µs - 150 - ns NOTES: 2. Pulse Test: Pulse Duration ≤ 300µs max, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP6P08, RFP6P10

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

1130 Brussels, Belgium

FIGURE 13. SWITCHING TIME TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS