RFG60P03 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 60A, 30V
  • r DS(ON) = 0.027Ω
  • Temperature Compensating PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • +175 oC Operating Temperature

Description

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufac- tured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49045. Symbol PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG60P03 TO-247 RFG60P03 RFP60P03 TO-220AB RFP60P03 RF1S60P03 TO-262AA F1S60P03 RF1S60P03SM TO-263AB F1S60P03 NOTE: When ordering use the entire part number. D G S December 1995 Absolute Maximum Ratings TC = +25oC RFG60P03, RFP60P03, RF1S60P03, RFS60P03SM UNITS Drain Current Refer to Peak Current Curve A Power Dissipation 176 1.17 W W/oC File Number 3951.1

Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Electrical SpecificationsTC = +25oC, Unless Otherwise Specified. PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V -30 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = -30V, VGS = 0V TC = +25oC- - - 1 µA TC = +150oC - - -50 µA Gate-Source Leakage Current I GSS VGS =±Ÿ20V - - 100 nA On Resistance r DS(ON) ID = 60A, VGS = -10V - - 0.027 Ω Turn-On Time t ON VDD = -15V, ID = 60A R L = 0.25Ω , VGS = -10V R GS = 2.5Ω - - 140 ns Turn-On Delay Time t D(ON) -2 0-n s Rise Time t R -7 5-n s Turn-Off Delay Time t D(OFF) -3 5-n s Fall Time t F -4 0-n s Turn-Off Time t OFF - - 115 ns Total Gate Charge Q G(TOT) VGS = 0 to -20V VDD = -24V, ID = 60A, R L = 0.4Ω - 190 230 nC Gate Charge at 10V Q G(-10) VGS = 0 to -10V - 100 120 nC Threshold Gate Charge Q G(TH) VGS = 0 to -2V - 7.5 9 nC Input Capacitance C ISS VDS = -25V, VGS = 0V f = 1MHz - 3000 - pF Output Capacitance C OSS - 1500 - pF Reverse Transfer Capacitance C RSS - 525 - pF Thermal Resistance, Junction to Case R θJC - - 0.85 oC/W Thermal Resistance, Junction to Ambient RθJA -- 8 0 oC/W Source-Drain Diode Ratings and Specifications PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD ISD = -60A - - -1.75 V Reverse Recovery Time t RR ISD = -60A, dISD /dt = -100A/µs - - 200 ns

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 4. PEAK CURRENT CAPABILITY FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

175 T C–

FIGURE 7. NORMALIZED r DS(ON) vs JUNCTION FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Temperature Compensated PSPICE Model for the RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM .SUBCKT RFP60P03 2 1 3 REV 6/21/94 CA 12 8 5.01e-9 CB 15 14 3.9e-9 CIN 6 8 3.09e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -36.59 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 2.36e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1e-4 RGATE 9 20 3.25 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 11.28e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.92 .MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12) .MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6) .MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6) .MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43) .ENDS NOTE: For further discussion of the PSPICE model consultA New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. MOS1 RDRAIN DBREAK LDRAIN DRAIN SOURCE LSOURCE DBODY RBREAK VBAT 19IT RSOURCE EBREAK MOS2 EDSEGS RIN CIN VTO ESG S1A S2A S2BS1B CBCA EVTORGATEGATE LGATE 1817 2091 12 15 + - DPLCAP RVTO