RFM5P12 MOSPEC | Alldatasheet

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RFMS5P12, RFM5P15, RFP5P12, RFP5P15 File Number 1463 P-Channel Enhancement-Mode Power Field-Effect Transistors 5A, 120V—150V Tps(on): 10 Features: . | ® SOA is power-dissipation limited = Nanosecond switching speeds ? = Linear transfer characteristics aceeseaos = High input impedance = Majority carrier device P-CHANNEL ENHANCEMENT MODE. TERMINAL DESIGNATIONS REMSPI2 RFMSPIS source crcanat ‘The RFM5P12 and RFM5P15 and the RFP5P12 and RFPSP15* are P-Channel enhancement-mode silicon gate power © field-effect transistors designed forhigh-speed applications © ‘such as switching regulators, switching converters, relay drivers, and drivers for high-power bipolar switching cate Fece-sreot transistors, The RFM-Series types are supplied in the JEDEC TO- aepspg HEDEC TO-204AA 204AA metal package and the RFP-Series types in the Arpepis JEDEC TO-220AB plastic Package. All these types are SOURCE. supplied without an internal gate Zener diode. ocean | Supplied without an internal gi —— * The AFM and RFP series were formerly RCA developmental (rvancer—el II os" numbers TA9320 and TA9321 respectively. dl ae — care TOP VIEW s2cs-39528 JEDEC TO-22008 . RFMSP12 RFMSP15 RFPSP12 RFPSPIS GATE-SOURCE VOLTAGE... ecco Vos TT £20 v @% = 26°C 5 75 60 60 w Derate above Tc = 25°C 06 06 0.48 0.48 wre VO “

G E SOLID STATE OL DEG) 3875081 oolseza s J , 3875061 G E SOLID STATE : O1E 18222 DT" S7-e! Standard Power MOSFETs RFM5P12, RFM5P15, RFP5P12, RFP5P15 TEST RFMSP12 RFMSP15 Bi CHARACTERISTIC conpiions | _nepsei2 UNITS Drain-Source Breakdown Voltage BVoss lo=1mA 420 : Vos = 0 | Gate-Threshold Voltage Vesim Ves = Vos |v | S emennes Te ele[e ll) & Zero-Gate Voltage Drain Current Vos = -100 V Vos = -120 V Te = 125°C Vos = -100 V : Vos = -120 V Gate-Source Leakage Current Ves = +20 V Vos = 0 Drain-Source On Voltage Vosien® I= 25A Vos =-10 V lo =5A Vas = -10 V Static Drain-Source On Resistance Ip=25A | 2 | Ves = -10 V Forward Transconductance Vos = 10V 0.76 0.75 lo =2.5 A Output Capacitance Vos=ov [= [300 [= | 300] Reverse-Transfer Capacitance t=imHz _[~— | 100 | —} 100 | Turn-On Delay Time | tetonr__] Voo = 1/2 BVoss | 20(typ.)] 60 | 20(typ.) | 60_| [ Rise time te} t= 254 [aertyp.)| 100 [36(typ, | 100_| ns | Turn-Otf Delay Time | teen Reon = Ros = SOR] 6R(typ.)| 150 [6a(typ.) | 150_| [-Fatime te | vos tov Party) | 100 [40(typ.) | 100_| Thermal Resistance Junction-to-Case RFMSP12, RFM5P15. 197 187 RFPS5P12, “ow ” 2.083 | rere | = fom] = fo “Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS . ec: a | TEST REMSP1: RFMSP15 characTenisTic SYMBOL | conDiTIONS | Min, [ Max. |" Min. | Max. | | Biode Forward vonage =| vw | mentee - | ve | dia | Reverse Recovery Time Ip = 4A 300(typ.) 300(typ.) dir/d = 100A/ps “Pulse Test: Width = 800 ws, Duty Cycle < 2%. 9 165

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RFM5P12, RFM5P15, RFP5P12, RFP5P15 | (CURVES MUST BE DERATEO = aii se ri titer Se eee “eee ey fo? 4 seh 2 4 6 al 2k 6 AL onAIN=TO°SOURCE VOLTAGE’ (Vos)=V essa Fig. 1 - Maximum safe operating areas for all types. EERE MU NSLSTEEH EEH BREE EEE pam GsHadraeeeeers enseasah RAE Oeeetetata i HiaeeEy Sool REESE EERE ETE JSST CUTETI NS diese TEE Fig. 2- Power dissipation vs. temperature Fig. 3- Typical normalized gate threshold erating curve for all types. _ voltage as @ function of junction a ~ a temperature for all types. ‘ is Fl HUTT FATE EEE . POSSESS Satearad nana Ginintanessecetstreaesaseeieaid| = SIESTA Ter Sadia Sat ete Ps “JUNCTION TEMPERATURE (T,)=*6> i [stl Been RE) secenare GATE-TO- SOURCE VOLTAGE (Vag) ¥_ ~ + Fig.4-Normalized drain-to-source on face seae resistance to junction temperature for Fig. § - Typical transfer characteristics for all all typos, types. 166 — es

G E SOLID STATE OL DE 3875081 0018224 4 J 5-2] 5 22a vy i” 29072081 GE SOLID STATE a. -.. OTE 182 . . Standard Power MOSFETs . RFM5P12, RFM5P15, RFP5P12, RFP5P15 SS ll, A EB each “iguen ORAIN-TO-SOUREE VOLTACE Wos!—We Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 - Typical saturation characteristics forall drive. types. Go IAI tT PORE are aca

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OO akin ctanentr (rg 1=A° gece aeaee Bhain-10-BBunce woEtace Negi? 2? Fig. 8 - Typical drain-to-source on resistance Fig. 9 - Capacitance as a function of drain-to- as a function of drain current for all Source voltage for all types. types. Fig. 11 - Switching Time Test Circuit. Fig. 10- Typical forward transconductance as a function of drain current forall typos ee “nN