RFG50N05L FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 50A, 50V DS(ON) = 0.022 Ω
  • UIS SOA Rating Curve (Single Pulse)
  • Design Optimized for 5V Gate Drive
  • Can be Driven Directly from CMOS, NMOS, TTL Circuits
  • Compatible with Automotive Drive Requirements
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC STYLE TO-247 JEDEC TO-220AB

Ordering Information

RFG50N05L TO-247 RFG50N05L RFP50N05L TO-220AB RFP50N05L NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A. D G S DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet January 2002

©2002 Fairchild Semiconductor Corporation RFG50N05L, RFP50N05L Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified RFG50N05L RFP50N05L UNITS DS 50 50 V Drain to Gate Voltage (R GS = 20k DGR 50 50 V D DM 130 130 A A GS 10 V D Above T C = 25 o 110 0.88 110 0.88 W o C J , T STG -55 to 150 -55 to 150 o C Maximum Temperature for Soldering L pkg 300 260 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 125 o Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250 µ A, V GS = 0V (Figure 10) 50 - - V Gate Threshold Voltage V GS(TH) V GS = V DS , I D = 250 µ A (Figure 9) 1 - 2 V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS , V GS = 0 - - 25 µ A V DS = 0.8 x Rated BV DSS , V GS = 0, T C = 150 o C - - 250 µ A Gate to Source Leakage Current I GSS V GS 10V, V DS = 0V - - 100 nA Drain to Source On Resistance (Note 2) r DS(ON) I D = 50A, V GS = 5V (Figure 7) - - 0.022 Ω I D = 50A, V GS = 4V - - 0.027 Ω Turn-On Time t (ON) V GS = 5V, R GS = 2.5 Ω , R L = 1 Ω (Figures 12, 15, 16) - - 100 ns Turn-On Delay Time t D(ON) -1 5- n s Rise Time t r -5 0- n s Turn-Off Delay Time t D(OFF) -5 0- n s Fall Time t f -1 5- n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge Q G(TOT) V GS = 0 to 10V V DD = 40V, I D = 50A R L = 0.8 Ω (Figures 17, 18) - - 140 nC Gate Charge at 5V Q G(5) V GS = 0 to 5V - - 80 nC Threshold Gate Charge Q G(th GS = 0 to 1V - - 6 nC Thermal Resistance Junction to Case R θ JC - - 1.14 o C/W Thermal Resistance Junction to Ambient R θ JA -- 8 0 o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD I SD = 50A - - 1.5 V Diode Reverse Recovery Time t rr I SD = 50A, dI SD /dt = 100A/ µ s - - 1.25 ns NOTES: 2. Pulsed: pulse duration = 300 µ s maximum, duty cycle = 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. RFG50N05L, RFP50N05L

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™