RFG50N05 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 50A, 50V
  • r DS(ON) = 0.022Ω
  • UIS Rating Curve (Single Pulse)
  • 175 oC Operating Temperature Symbol Packaging

Ordering Information

RFP50N05 TO-220AB RFP50N05 NOTE: When ordering, include the entire part number. G D S JEDEC STYLE TO-247 JEDEC TO-220AB DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE DRAIN GATE Data Sheet July 1999 File Number 2873.3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N05, RFP50N05 UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 0.250µA, VGS = 0V (Figure 9) 50 - - V Gate Threshold Voltage V GS(TH) VDS = VGS , ID = 0.250µA (Figure 8) 2.0 - 4.0 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 A Zero Gate Voltage Drain Current, V DS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 150oC- -2 5 µA Gate to Source Leakage Current I GSS VGS =±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 50A, VGS = 10V (Figure 7) - - 0.022 Ω Turn-On Time t (ON) VDD = 25V, ID ≈ 25A, RL = 1.0Ω, R GS = 6.67Ω , VGS = 10V (Figure 11) - - 100 ns Turn-On Delay Time t d(ON) -1 5- n s Rise Time t r -5 5- n s Turn-Off Delay Time t d(OFF) -6 0- n s Fall Time t f -1 5- n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge Q g(tot) VGS = 0-20V V DD - 40V, ID = 50A R L = 0.8Ω, IG(REF) = 1.5mA (Figure 11) - - 160 nC Gate Charge at 10V Q g(10) VGS = 0-10V - - 80 nC Threshold Gate Charge Q g(th) VGS = 0-2V - - 6 nC Thermal Resistance Junction to Case R θJC - - 1.14 oC/W Thermal Resistance Junction to Ambient RθJA TO-220 - - 62 oC/W TO-247 30 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 50A - 1.5 V Diode Reverse Recovery Time t rr ISD = 50A, dlSD /dt = 100A/µs - 125 ns NOTES: 2. Pulsed test: pulse width≤ 300µs duty cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFG50N05, RFP50N05

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

3 PULSE DURATION = 80 µs

0.25 BVDSS

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFG50N05, RFP50N05