RFM4N35 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 4A, 350V and 400V
  • r DS(ON) = 2.000Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB

Ordering Information

NOTE: When ordering, use the entire part number. D G S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) DRAIN (FLANGE) DRAIN GATE SOURCE Data Sheet October 1998 File Number 1491.3 [ /Title /Sub- ject () /Autho r () /Key- words /Cre- ator () /DOCI NFO pdf- mark /Page- Mode /Use- Out- lines /DOC- VIEW pdf- mark [ /Title (RFM4N 35, RFM4N 40, RFP4N3 RFP4N4 /Subject (4A, 350V and 400V , 2.000 Ohm, N- Channel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N- Channel Power MOS- FETs, TO- 204AA, TO- 220AB) /Creator

Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS Maximum Temperature for Soldering 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 RFM4N40, RFP4N40 400 - - V RFM4N35, RFP4N35 350 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS --1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC- -2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω Drain to Source On-Voltage (Note 2) V DS(ON) ID = 4A, VGS = 10V - - 8 V Turn-On Delay Time t D(ON) VDD = 200V, ID = 2A, RG = 50Ω R L = 100Ω , VGS = 10V (Figures 10, 11, 12) -1 2 4 5 n s Rise Time t r -4 2 6 0 n s Turn-Off Delay Time t D(OFF) - 130 200 ns Fall Time t f - 62 100 ns Input Capacitance C ISS VDS = 25V, VGS = 0V f = 1MHz (Figure 9) - - 750 pF Output Capacitance C OSS - - 150 pF Reverse-Transfer Capacitance C RSS - - 100 pF Thermal Resistance Junction to Case R θJC RFM4N35, RFM4N40 - - 1.67 oC/W RFP4N35, RFP4N40 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 2A - - 1.4 V Reverse Recorvery Time t rr ISD = 4A, dISD /dt = 100A/µs - 800 - ns NOTES: 2. Pulse Test: Pulse Width≤ 300µs, Duty Cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFM4N35, RFM4N40, RFP4N35, RFP4N40

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS