RFP4N05 INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • 4A, 50V and 60V
  • r DS(ON) = 0.800Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

NOTE: When ordering, include the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN June 1999 File Number 2880.2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05 RFP4N06 UNITS Maximum Temperat6ure for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 RFP4N05 50 - - V RFP4N06 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS ,VGS = 0V, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V, (Figures 6, 7) - - 0.800 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 4A, VGS = 10V - - 3.2 V Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 30V, RGS = 50Ω , R L = 29.2Ω , VGS = 10V, (Figure 10) - 6 15 ns Rise Time t r -1 4 3 0 n s Turn-Off Delay Time t d(OFF) -1 6 3 0 n s Fall Time t f -1 4 2 5 n s Input Capacitance C ISS VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) - - 200 pF Output Capacitance C OSS - - 85 pF Reverse-Transfer Capacitance C RSS - - 30 pF Thermal Resistance Junction to Case R θJC -- 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 1A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 2A, dlSD /dt = 50A/µs - 100 - ns NOTES: 2. Pulsed test: width≤ 300µs duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP4N05, RFP4N06

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

1130 Brussels, Belgium

FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS