RFG45N06 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 45A, 60V
  • r DS(ON) = 0.028Ω
  • Temperature Compensating PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • +175 oC Operating Temperature

Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switch- ing regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49028. Symbol PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG45N06 TO-247 RFG45N06 RFP45N06 TO-220AB RFP45N06 RF1S45N06 TO-262AA F1S45N06 RF1S45N06SM TO-263AB F1S45N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM 9A. D G S File Number 3574.2

Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Electrical SpecificationsTC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 60V, VGS = 0V TC = +25oC- - 1 µA TC = +150oC- -5 0 µA Gate-Source Leakage Current I GSS VGS =±20V - - 100 nA On Resistance r DS(ON) ID = 45A, VGS = 10V - - 0.028 Ω Turn-On Time t ON VDD = 30V, ID = 45A R L = 0.667Ω , VGS = +10V R GS = 3.6Ω - - 120 ns Turn-On Delay Time t D(ON) -1 2- n s Rise Time t R -7 4- n s Turn-Off Delay Time t D(OFF) -3 7- n s Fall Time t F -1 6- n s Turn-Off Time t OFF - - 80 ns Total Gate Charge Q G(TOT) VGS = 0 to 20V VDD = 48V, ID = 45A, R L = 1.07Ω - 125 150 nC Gate Charge at 10V Q G(10) VGS = 0 to 10V - 67 80 nC Threshold Gate Charge Q G(TH) VGS = 0 to 2V - 3.7 4.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V f = 1MHz - 2050 - pF Output Capacitance C OSS - 600 - pF Reverse Transfer Capacitance C RSS - 200 - pF Thermal Resistance Junction to Case R θJC - - 1.14 oC/W Thermal Resistance Junction to Ambient RθJA -- 8 0 oC/W Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V SD ISD = 45A - - 1.5 V Reverse Recovery Time t RR ISD = 45A, dISD /dt = 100A/µs - - 125 ns

FIGURE 1. SAFE- OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 4. PEAK CURRENT CAPABILITY FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

175 T C–

FIGURE 7. NORMALIZED r DS(ON) vs JUNCTION FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN FIGURE 10. NORMALIZED POWER DISSIPATION vs FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM Temperature Compensated PSPICE Model for the RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM .SUBCKT RFP45N0 6213 REV 1/18/93 *NOM TEMP = +25 oC CA 12 8 3.49E-9 CB 15 14 3.8E-9 CIN 6 8 2E-9 DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1E-9 LGATE 1 9 5.65E-9 LSOURCE 3 7 4.13E-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 3.58E-3 RGATE 9 20 0.681 RIN 6 8 1E9 RSOURCE 8 7 RDSMOD 13.6E-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.92 .MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5) .MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10) .MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7) .MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5) .MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0) .ENDS NOTE: For further discussion of the PSPICE model consultA New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. DPLCAP RDRAIN DBREAK LDRAIN DRAIN SOURCE LSOURCE DBODY RBREAK RVTO VBAT 19IT RSOURCE EBREAK MOS2 EDSEGS RIN CIN VTO ESG S1A S2A S2BS1B CBCA EVTO RGATE GATE LGATE 1817 2091 12 15 + - + MOS1 8 17