RFP45N02L INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 45A, 20V
  • r DS(ON) = 0.022Ω
  • Temperature Compensating PSPICE Model
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175 oC Operating Temperature

Description

The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from inte- grated circuits. Formerly developmental type TA49243. Symbol Packaging

Ordering Information

RFP45N02L TO-220AB FP45N02L RF1S45N02L TO-262AA F45N02L RF1S45N02LSM TO-263AB F45N02L NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S45N02LSM9A. G D S JEDEC TO-220AB JEDEC TO-262AA JEDEC TO-263AB DRAIN (FLANGE) SOURCE DRAIN GATE A SOURCE DRAIN GATEDRAIN (FLANGE) A A M DRAIN (FLANGE) GATE SOURCE File Number 4342CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207| Copyright © Intersil Corporation 1999

RFP45N02L, RF1S45N02L, RF1S45N02LSM Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFP45N02L, RF1S45N02L, RF1S45N02LSM UNITS Drain Current Refer to Peak Current Curve A 0.606 W W/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 20 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V TC = 25oC- - 1 µA TC = 150oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS = ±10V - - ±100 nA Drain to Source On Resistance r DS(ON) ID = 45A, VGS = 5V - - 0.022 Ω Turn-On Time t ON VDD = 15V, ID ≅ 45A, R L = 0.33Ω , VGS = 5V, R GS = 5Ω - - 260 ns Turn-On Delay Time t d(ON) -1 5-n s Rise Time t r - 160 - ns Turn-Off Delay Time t d(OFF) -2 0-n s Fall Time t f -2 0-n s Turn-Off Time t OFF - - 60 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V VDD = 16V, ID ≅ 45A, R L = 0.35Ω -5 0 6 0 n C Gate Charge at 5V Q g(5) VGS = 0V to 5V - 30 36 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - 1.5 1.8 nC Input Capacitance C ISS VDS = 15V, VGS = 0V, f = 1MHz - 1300 - pF Output Capacitance C OSS - 724 - pF Reverse Transfer Capacitance C RSS - 250 - pF Thermal Resistance Junction to Case R θJC - - 1.65 oC/W Thermal Resistance Junction to Ambient RθJA -- 8 0 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 45A - - 1.5 V Reverse Recovery Time t rr ISD = 45A, dISD /dt = 100A/µs - - 125 ns RFP45N02L, RF1S45N02L, RF1S45N02LSM

RFP45N02L, RF1S45N02L, RF1S45N02LSM Temperature Compensated PSPICE Model for the RFP45N02L, RF1S45N02L, RF1S45N02LSM .SUBCKT RFP45N02L 2 1 3 ; rev 11/22/94 CA 12 8 2.55e-9 CB 15 14 2.64e-9 CIN 6 8 1.05e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 33.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.9e-9 LSOURCE 3 7 4.9e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 0.14e-3 RGATE 9 20 0.89 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 10.31e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.583 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))} .MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6) .MODEL DPLCAPMOD D (CJO = 1.25e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7) .MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5) .MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5) .MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 7 3 17 18 RDRAIN ESCL RSCL1RSCL2 EBREAK + RFP45N02L, RF1S45N02L, RF1S45N02LSM

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFP45N02L, RF1S45N02L, RF1S45N02LSM