RFP42N03L

RFP42N03L INTERSIL | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• 42A, 30V
• r DS(ON) = 0.025Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging

Ordering Information

RFP42N03L TO-220AB FP42N03L RF1S42N03LSM TO-263AB F42N03L NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A. G D S JEDEC TO-220AB JEDEC TO-263AB GATE DRAIN (FLANGE) SOURCE DRAIN DRAIN (FLANGE) GATE SOURCE Data Sheet July 1999 File Number 4302.2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP42N03L, RF1S42N03LSM UNITS Refer to Peak Current Curve A 0.606 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 30 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 150oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS = ±10V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 42A, VGS = 5V (Figure 11) - - 0.025 Ω Turn-On Time t ON VDD = 15V, ID ≈ 42A, RL = 0.357Ω , VGS = 5V, RGS = 5Ω (Figures 10, 18, 19) - - 260 ns Turn-On Delay Time t d(ON) -1 5- n s Rise Time t r - 160 - ns Turn-Off Delay Time t d(OFF) -2 0- n s Fall Time t f -2 0- n s Turn-Off Time t OFF - - 60 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 24V, ID ≈ 42A, R L = 0.571Ω IG(REF) = 0.6mA (Figures 15, 20, 21) -5 0 6 0n C Gate Charge at 5V Q g(5) VGS = 0V to 5V - 30 36 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - 1.5 1.8 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 14) - 1650 - pF Output Capacitance C OSS - 575 - pF Reverse Transfer Capacitance C RSS - 200 - pF Thermal Resistance Junction-to-Case R θJC - - 1.65 oC/W Thermal Resistance Junction-to-Ambient R θJA -- 8 0 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 42A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 42A, dISD /dt = 100A/µs - - 125 ns NOTES: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). RFP42N03L, RF1S42N03LSM

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

.SUBCKT RFP42N03L 2 1 3 ; rev 12/24/96 CA 12 8 2.55e-9 CB 15 14 2.64e-9 CIN 6 8 1.45e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 33.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.9e-9 LSOURCE 3 7 4.9e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 0.14e-3 RGATE 9 20 0.89 RLDRAIN 2 5 10 RLGATE 1 9 49 RLSOURCE 3 7 49 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 10.31e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.583 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))} .MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6) .MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7) .MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5) .MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5) .MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. GATE RLGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS CIN MOS1 MOS2 DBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 7 3 17 18 RDRAIN ESCL RSCL1RSCL2 EBREAK + LGATE RLSOURCE RLDRAIN RFP42N03L, RF1S42N03LSM

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFP42N03L, RF1S42N03LSM