RFG30P06 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 30A, 60V
  • r DS(ON) = 0.065Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175 oC Operating Temperature
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC STYLE TO-247 JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 NOTE: When ordering, use the entire part number. Add thesuffix 9A to obtain the TO-263AB variant in tape and reel, i.e.RF1S30P06SM9A. D G S DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE Data Sheet July 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG30P06, RFP30P06 RF1S30P06SM UNITS Refer to Peak Current Curve A 135 0.9 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V -60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = -60V, VGS = 0V - - -1 µA VDS = 0.8 x Rated BVDSS , TC = 150oC - - -25 µA Gate to Source Leakage Current I GSS VGS =±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = -30A, VGS = -10V (Figure 9) - - 0.065 Ω Turn-On Time t (ON) VDD = -30V, ID = 15A, RL = 2.00Ω , VGS = -10V R G = 6.25Ω (Figure 13) - - 80 ns Turn-On Delay Time t d(ON) -1 5-n s Rise Time t r -2 3-n s Turn-Off Delay Time t d(OFF) -2 8-n s Fall Time t f -1 8-n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge Q g(TOT) VGS = 0 to -20V VDD = -48V, ID = 30A, R L = 1.6Ω, IG(REF) = 1.6mA - 140 170 nC Gate Charge at -10V Q g(-10) VGS = 0 to -10V - 70 85 nC Threshold Gate Charge Q g(TH) VGS = 0 to -2V - 5.5 6.6 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 3200 - pF Output Capacitance C OSS - 800 - pF Reverse Transfer Capacitance C RSS - 175 - pF Thermal Resistance, Junction to Case R θJC - - 1.11 oC/W Thermal Resistance, Junction to Ambient RθJA TO-220, TO-263 - - 62 oC/W TO-247 30 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MAX Source to Drain Diode Voltage (Note 2) V SD ISD = -30A - - -1.5 V Diode Reverse Recovery Time t RR ISD = -30A, dISD /dt = -100A/µs - - 150 ns NOTE: 2. Pulse test: pulse width≤ 300µs maximum, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). RFG30P06, RFP30P06, RF1S30P06SM

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

175 T C–

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

20 IG(REF)

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

.SUBCKT RFP30P06 2 1 3; REV 8/21/94 CA 12 8 3.23e-9 CB 15 14 3.23e-9 CIN 6 8 3.08e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -77.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.60e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 39.85e-3 RGATE 9 20 2.34 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 2.56e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.81 ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))} .MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5) .MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5) .MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7) .MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2) .ENDS NOTE: For further discussion of the PSPICE model consultA New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 610 7 3 17 18 RDRAIN ESCL RSCL1RSCL2 RFG30P06, RFP30P06, RF1S30P06SM

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFG30P06, RFP30P06, RF1S30P06SM