RFP30N06LE

RFP30N06LE FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 30A, 60V r DS(ON) = 0.047Ω  2kV ESD Protected  Temperature Compensating PSPICE ® Model  Peak Current vs Pulse Width Curve  UIS Rating Curve  Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging

Ordering Information

RFP30N06LE TO-220AB P30N06LE RF1S30N06LESM TO-263AB 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. G D S JEDEC TO-220AB JEDEC TO-263AB GATE DRAIN (FLANGE) SOURCE DRAIN DRAIN (FLANGE) GATE SOURCE Data Sheet January 2004

©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1 Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified RFP30N06LE, RF1S30N06LESM UNITS Refer to Peak Current Curve A 0.645 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V, Figure 11 60 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, Figure 10 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0 - - 25 µA VDS = 0.8 x Rated BVDSS , VGS = 0, TC = 150oC- - 2 5 0 µA Gate to Source Leakage Current I GSS VGS = +10, -8V - - ±10 µA Drain to Source On Resistance (Note 2) rDS(ON) ID = 30A, VGS = 5V, Figure 9 - - 0.047 Ω Turn-On Time t ON VDD = 30V, ID = 30A, RL = 1Ω , VGS = 5V, R GS = 2.5Ω, Figures 13, 16, 17 -- 1 4 0 n s Turn-On Delay Time t d(ON) -1 1- n s Rise Time t r -8 8- n s Turn-Off Delay Time t d(OFF) -3 0- n s Fall Time t f -4 0- n s Turn-Off Time t OFF -- 1 0 0 n s Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 48V, ID = 30A, R L = 1.6Ω Figures 18, 19 -5 1 6 2 n C Gate Charge at 5V Q g(5) VGS = 0V to 5V - 28 34 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - 1.8 2.6 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz Figure 12 - 1350 - pF Output Capacitance C OSS - 290 - pF Reverse Transfer Capacitance C RSS -8 5-p F Thermal Resistance Junction to Case R θJC - - 1.55 oC/W Thermal Resistance Junction to Ambient R θJA -- 8 0 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 30A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 30A, dISD /dt = 100A/µs- - 1 2 5 n s NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFP30N06LE, RF1S30N06LESM

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

175 T c–

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1 SUBCKT RFP30N06LE 2 1 3; rev 6/2/93 CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 75.39 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 7.22e-9 LSOURCE 3 7 6.31e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 11.86e-3 RGATE 9 20 2.52 RIN 6 8 1e9 RSCL1 5 51 RSLVCMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.5 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7)) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 17 18 RDRAIN ESCL RSCL1RSCL2 EBREAK + DESD1 DESD2 RFP30N06LE, RF1S30N06LESM

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ ImpliedDisconnect™ ISOPLANAR™ Rev. I6 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS TM EnSignaTM FACT™ Power247™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™