RFD3055LE INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 11A, 60V
  • r DS(ON) = 0.107Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging

Ordering Information

RFD3055LESM TO-252AA F3055L RFP3055LE TO-220AB FP3055LE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. D G S JEDEC TO-220AB JEDEC TO-251AA JEDEC TO-252AA GATE DRAIN (FLANGE) SOURCE DRAIN SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) Data Sheet November 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM, RFP3055LE UNITS Refer to Peak Current Curve A 0.25 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA1 - 3 V Zero Gate Voltage Drain Current I DSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150oC - - 250 µA Gate to Source Leakage Current I GSS VGS =±16V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 8A, VGS = 5V (Figure 11) - - 0.107 Ω Turn-On Time t ON VDD ≈ 30V, ID = 8A, VGS = 4.5V, RGS = 32Ω (Figures 10, 18, 19) - - 170 ns Turn-On Delay Time t d(ON) -8 - n s Rise Time t r - 105 - ns Turn-Off Delay Time t d(OFF) -2 2 - n s Fall Time t f -3 9 - n s Turn-Off Time t OFF - - 92 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 20, 21) - 9.4 11.3 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V - 5.2 6.2 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - 0.36 0.43 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 14) - 350 - pF Output Capacitance C OSS - 105 - pF Reverse Transfer Capacitance C RSS -2 3 - p F Thermal Resistance Junction to Case R θJC - - 3.94 oC/W Thermal Resistance Junction to Ambient R θJA TO-220AB - - 62 oC/W TO-251AA, TO-252AA - - 100 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 8A - 1.25 V Diode Reverse Recovery Time t rr ISD = 8A, dISD /dt = 100A/µs - 66 ns NOTES: 2. Pulse Test: Pulse Width≤ 300ms, Duty Cycle≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD3055LE, RFD3055LESM, RFP3055LE

.SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95 CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.25e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 LSOURCE 3 7 2.57e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 54.2 RLSOURCE 3 7 25.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.50e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))} .MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81) .MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 0 TC2 = 0) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -2.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5) .ENDS NOTE: For further discussion of the PSPICE model, consultA New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE RFD3055LE, RFD3055LESM, RFP3055LE

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFD3055LE, RFD3055LESM, RFP3055LE