RFD3055LE FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 11A, 60V DS(ON) = 0.107 Ω
  • Temperature Compensating PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging

Ordering Information

RFD3055LESM TO-252AA F3055L RFP3055LE TO-220AB FP3055LE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. D G S JEDEC TO-220AB JEDEC TO-251AA JEDEC TO-252AA GATE DRAIN (FLANGE) SOURCE DRAIN SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) Data Sheet January 2002

©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified RFD3055LE, RFD3055LESM, RFP3055LE UNITS DSS 60 V Drain to Gate Voltage (R GS = 20k Ω DGR 60 V GS 16 V D DM Refer to Peak Current Curve A AS Refer to UIS Curve D Derate Above 25 o 0.25 W o C J , T STG -55 to 175 o C Maximum Temperature for Soldering L pkg 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 150 o Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250 µ A, V GS = 0V 60 - - V Gate Threshold Voltage V GS(TH) V GS = V DS , I D = 250 µ A1 - 3 V Zero Gate Voltage Drain Current I DSS V DS = 55V, V GS = 0V - - 1 µ A V DS = 50V, V GS = 0V, T C = 150 o C - - 250 µ A Gate to Source Leakage Current I GSS V GS 16V - - 100 nA Drain to Source On Resistance (Note 2) r DS(ON) I D = 8A, V GS = 5V (Figure 11) - - 0.107 Ω Turn-On Time t ON V DD 30V, I D = 8A, V GS = 4.5V, R GS = 32 Ω (Figures 10, 18, 19) - - 170 ns Turn-On Delay Time t d(ON) -8 - n s Rise Time t r - 105 - ns Turn-Off Delay Time t d(OFF) -2 2 - n s Fall Time t f -3 9 - n s Turn-Off Time t OFF - - 92 ns Total Gate Charge Q g(TOT) V GS = 0V to 10V V DD = 30V, I D = 8A, I g(REF) = 1.0mA (Figures 20, 21) - 9.4 11.3 nC Gate Charge at 5V Q g(5) V GS = 0V to 5V - 5.2 6.2 nC Threshold Gate Charge Q g(TH) V GS = 0V to 1V - 0.36 0.43 nC Input Capacitance C ISS V DS = 25V, V GS = 0V, f = 1MHz (Figure 14) - 350 - pF Output Capacitance C OSS - 105 - pF Reverse Transfer Capacitance C RSS -2 3 - p F Thermal Resistance Junction to Case R θ JC - - 3.94 o C/W Thermal Resistance Junction to Ambient R θ JA TO-220AB - - 62 o C/W TO-251AA, TO-252AA - - 100 o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD I SD = 8A - 1.25 V Diode Reverse Recovery Time t rr I SD = 8A, dI SD /dt = 100A/ µ s - 66 ns NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD3055LE, RFD3055LESM, RFP3055LE

©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B .SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95 CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.25e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 67.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 5.42e-9 LSOURCE 3 7 2.57e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.7e-2 RGATE 9 20 3.37 RLDRAIN 2 5 10 RLGATE 1 9 54.2 RLSOURCE 3 7 25.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2.50e-2 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))} .MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6) .MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81) .MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37) .MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0) .MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5) .MODEL RSLCMOD RES (TC1 = 0 TC2 = 0) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6) .MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -2.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5) .ENDS For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE RFD3055LE, RFD3055LESM, RFP3055LE

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™