RFP2P08 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • -2A, -80V and -100V
  • r DS(ON) = 3.500Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol Packaging TO-220AB

Ordering Information

NOTE: When ordering, use entire part number. D G S GATE DRAIN (FLANGE) SOURCE DRAIN October 1998 File Number 2870.1 [ /Title (RFP2P 08, RFP2P 10) /Sub- ject (- 2A, - 80V and - 100V , 3.500 Ohm, P-Chan- nel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, P-Chan- nel Power MOS- FETs, TO- 220AB) /Cre- ator () /DOCI NFO pdf- Data Sheet

A A 0.2 0.2 W W/oCaaa Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = -250µA, VGS = 0 RFP2P08 -80 - - V RFP2P10 -100 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = -250µA - 2-- 4V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - -1 µA VDS = 0.8 x Rated BVDSS ,VGS = 0V, TC = 125oC - - -25 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = -2A, VGS = -10V - - -7.0 V Turn-On Delay Time t d(ON) ID =≈ 1A, VDD = -50V, RG = 50Ω , VGS = -10V, R L = 46.5Ω (Figures 10, 11, 12) - 7 25 ns Rise Time t r -1 5 4 5n s Turn-Off Delay Time t d(OFF) -1 4 4 5n s Fall Time t f -1 1 2 5n s Input Capacitance C ISS VGS = 0V, VDS = -25V, f =1MHz (Figure 9) - - 150 pF Output Capacitance C OSS - - 80 pF Reverse Transfer Capacitance C RSS - - 30 pF Thermal Resistance Junction to Case R θJC --5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -1A - - -1.4 V Diode Reverse Recovery Time t rr ISD = -2A, dISD /dt = 50A/µs - 135 - ns NOTES: 2. Pulse Test: Pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFP2P08, RFP2P10

FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS