RFP2N12 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 2A, 120V and 150V
  • r DS(ON) = 1.750Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Formerly developmental type TA09196. Symbol Packaging JEDEL TO-220AB

Ordering Information

NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN GATEDRAIN (FLANGE) September 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 2882.1 RFP2N12, RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs [ /Title (RFP2N 12, RFP2N1 /Subject (2A, 120V and 150V , 1.75 Ohm, N- Channel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N- Channel Power MOS- FETs, TO- 220AB) /Creator /DOCIN FO pdf- mark [ /Page- Mode

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N12 RFP2N15 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFP2N12 120 - - V RFP2N15 150 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 125oC -- 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 2A, VGS = 10V(Figures 6, 7) - - 1.750 Ω Drain to Source On Voltage V DS(ON) ID = 2A, VGS = 10V - - 3.5 V Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 75V, RG = 50Ω , R L = 73Ω , VGS = 10V (Figures 10, 11, 12) -1 7 2 5 n s Rise Time t r -3 0 4 5 n s Turn-Off Delay Time t d(OFF) -3 0 4 5 n s Fall Time t f -1 7 2 5 n s Input Capacitance C ISS VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) - - 200 pF Output Capacitance C OSS - - 80 pF Reverse-Transfer Capacitance C RSS - - 25 pF Thermal Resistance Junction to Case R θJC --5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -1A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 2A, dlSD /dt = 50A/µs - 150 - ns NOTES: 2. Pulsed test: Pulse width≤ 300µs duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP2N12, RFP2N15