RFP2N08 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 2A, 80V and 100V
  • r DS(ON) 1.05Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Description

These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. Symbol Packaging JEDEC TO-220AB

Ordering Information

NOTE: When ordering, use entire part number. D G S SOURCE DRAIN GATEDRAIN (FLANGE) July 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs File Number 2883.1

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N08 RFP2N10 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 RFP2N10 100 - - V RFP2N08 80 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS , TC = 25oC- - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 2A, VGS = 10V (Figures 6, 7) - - 1.05 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 2A, VGS = 10V - - 2.1 V Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 50V, RG = 50Ω , R L = 25Ω , VGS = 10V (Figures 10, 11, 12) -1 7 2 5 n s Rise Time t r -3 0 4 5 n s Turn-Off Delay Time t d(OFF) -3 0 4 5 n s Fall Time t f -1 7 2 5 n s Input Capacitance C ISS VGS = 0V, VDS = 25V, f =1MHz (Figure 9) - - 200 pF Output Capacitance C OSS - - 80 pF Reverse-Transfer Capacitance C RSS - - 25 pF Thermal Resistance Junction to Case R θJC -- 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 2A - 1.4 V Diode Reverse Recovery Time t rr ISD = 2A, dISD /dt = 50A/µs - 100 - ns NOTES: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP2N08, RFP2N10

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

0.75 VDSS

0.50 VDSS

0.25 VDSS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS