RFP25N05L INTERSIL | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- 25A, 50V
- r DS(ON) = 0.047Ω
- UIS SOA Rating Curve (Single Pulse)
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from CMOS, NMOS, TTL Circuits
- Compatible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB
Ordering Information
RFP25N05L TO-220AB RFP25N05L NOTE: When ordering, include the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet July 1999
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP25N05L UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS VGS = 0V, ID = 250µA (Figure 10) 50 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 9) 1.0 - 2.0 V Gate to Source Leakage I GSS VGS =±10V, VDS = 0V - - ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 40V, VGS = 0V - - 1.0 µA TC = 150oC- - 5 0 µA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 5V, ID = 25A (Figures 7, 8) - - 0.047 Ω VGS = 4V, ID = 25A - - 0.056 Ω Turn-On Time t (ON) VDD = 25V, ID =12.5A R L = 2Ω, R GS = 5Ω (Figures 15, 16) - - 60 ns Turn-On Delay Time t d(ON) -1 5- n s Rise Time t r -3 5- n s Turn-Off Delay Time t d(OFF) -4 0- n s Fall Time t f -1 4- n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge (Gate to Source + Gate to Drain) Q g(TOT) VGS = 0 - 10V V DD = 40V, ID = 25A, R L = 1.6Ω (Figures 17, 18) - - 80 nC Gate Charge at 5V Q g(5) VGS = 0 - 5V - - 45 nC Threshold Gate Charge Q g(TH) VGS = 0 - 1V - - 3.0 nC Thermal Resistance Junction to Case R θJC - - 2.083 oC/W Thermal Resistance Junction to Ambient RθJA -- 8 0 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 25A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 25A, dISD /dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse width≤ 80µs, duty cycle≤ 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. RFP25N05L
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee
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TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFP25N05L