RFM25N05 ETC | Alldatasheet

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G E SOLID STATE 01 deff 3875082 OO1a1a1 & _3875081 G E SOLID STATE O1E 18181 D7 39-3 Standard Power MOSFETs RFM25N05, RFM25N06, RFP25NO05, RFP25N06 File Number 1492 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode TERMINAL DIAGRAM Power Field-Effect Transistors ° :

25 A, 50V-60V

[ Tps(on) = 0.070 ° Features: ® SOA is power-dissipation limited ™ Nanosecond switching speeds 3 ses-asta

8 Linear transfer characteristics r2C8 89761

: ieee vaniee dovioe N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS The RFM25NO5 and RFM25NO6 and the RFP25NOS and REM25NO5 awn RFP25NO06" are n-channel enhancement-mode silicon-gate RFM25N06 source (FLANGE) power field-effect transistors designed for applications such as switching regulators, switching converters, motor driv- ® ers, relay drivers, and drivers for high-power bipolar switch- ing transistors requiring high speed and low gate-drive e power. These types can be operated directly from inte- care Grated circuits, ‘acest The RFM-types are supplied in the JEDEC TO-204AA steel RFP2SN JEDEC TO-204AA Package and the RFP-types in the JEDEC TO-220AB plastic rpssnog, package. — ‘source vThe AFM and REP gona way WoauUIN ROA gue otiite, — “The AFM and REP series were formerly RCA developmental ——r ‘umbers TASG86 and TA3S87 respectively. a yor view GATE JEDEC TO-220A8 RFMasNOS —-RFMZSNOS RFP2SNOS —_AFPZ5NOS . DRAIN-GATE VOLTAGE (Ry-1 MA) -... Voon 0 © 50 © v GATE-SOURCE VOLTAGE oe... Von ee DRAIN CURRENT. RMS Contiuous weve. Ip a? : PUISCD eeeeeosssowe a DF Derate above Te-25*C 08 08 08 06 = wre OPERATING AND STORAGE TEMPERATURE eccscccseeccccses Te Tay Bt etg9 ne

G E SOLID STATE OL ve 3875081 0018142 & I _3875081 G E SOLID STATE o1e 18182. DI- 39-13 RFM25N05, RFM25N06, RFP25N05, RFP25N06 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C unless otherwise specified. TEST REM25NO05 RFM25N06 | min. | MAX. [ MIN. | Max. | a Vos=0 Io=1 mA. Zero Gate Voltage Drain Current Vos=40 V |= [i] | 7 | Vos=50 V To=125°C uA Vos=40 V Vos=50 V Drain-Source On Voltage Vos(on)* 1p=12.5A [= |] Vas=10 V v Vos=10 V_ Vos=10 V Ip=12.5 A Vesrov [= | 900 [= 800 | | Turn-On Delay Time | —ita(on) | —Voo-aov —(| teityp) | 60_—| 16(typ) | 60_| [Risetime Tt to t2.5A | 120(typ)] 225 | 120(typ) | 225 | Turn-Off Delay Timo | tatoff) | Reon=Aer=500 [423(typ)| 225 | 123(typ)| 225 | [FalTime Tt | Ves=t0V__| 123¢typ)|_ 200 | 123(typ)| 200 _| Junction-to-Case RFM25NO06_ ° RFP25NO5, jer | “Ow RFP25NO06 *Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST REM25N05 RFM25NO06, : [Diode Forward Voltage | Veo | tao tS A | | a | Pa m led A [renee taco |e | ayaa [vane | wonm | w | “Pulse Test: Width = 300 ys, duty cycle < 2%. SS

G E SOLID STATE a1 vel 3875081 OO18183 O I

3875081 G E SOLID STATE O1e 18183 DP T"39-13

Standard Power MOSFETs —_-_ RFM25N05, RFM25N06, RFP25N05, RFP25N06 100 «| case TEMPERATURE (To) 25°c P= SERS Se EH {)tetiwes wosr se oensteo ERS ees ANEARLY WITH INCREASE IN popor dep Sees ea ta . ESS ke SHC le HE tenn fi oe fae Pi reo AEC HIN lee EL HL Udeali Elia SBN wes BLN es Boece 2 Teall ° ON EMER See! Sco ese ereealll pier sone Ere Gut eee Scarlets Se mSeeety| ae eeu Nee Gecr tec escm edie a EADS ES thir beeat beriHtH -- Gal PEE Ne Shs ute are T | eee PERE RSC EEL EE EETTT| eC ecen Tees a oes eet he ee PU LEN Se te eee e gg gee cece s se eeeaere|| File 255 eres eer erage eecall Ye ee aici pe Se Sees: SSS SSH a eezil [yp anne Sov eran nreasvooE] | Sa ee = PES oy SPE Ee ere ee Ee Peery ' © 00 1000 (ORKIN-TO-SOURCE VOLTAGE (Vog) —V s2es 2708881 Fig. 1 — Maximum operating aross forall types. i RV cE FR

7 H «a REGS

E See ne Famer estsnietinaniitineeeeeetittie ceeeiieaiiity ee a Oe eS ABU noe 258 tavemune "Eg soon TMPERATME =" Fig. 2 — Power dissipation vs. case temperature derating Fig. 3 — Typical normalized gate threshold voltage as a function curve forall ypes: : of function temperature forall iypes 7: ELEEEELESEETeaececcesaceebeecatsnietaesnegeszesasg| Pear ciciciceanenusilaniliiisty ral aoe 8 /ESEESREERUOEBOESESGESOSCagEMESESESSSEESEEEREIETaE3| Bad ial ean nun nutnuu @ eUUTT TE 80 ° 0 100, 180 ‘200 2 . le Lan a sero TeuPenaTUnE(,)—e areca VOLTA (vg) —¥ Fig. 4 — Normalized drain-to-source on resistance to junction Fig. § ~ Typical transter charactoristies forall ypes. femperature for al types. V6 en

G E SOLID STATE OL DEB) 3875082 ooLeLay 1 i , 3875081 GE SOLID STATE ———— O1E 18184 DT 39-13 — SSS PStandara Power MOSFETs RFM25N05, RFM25N06, RFP25N05, RFP25NO06 ie 0 ee POE aera ORAIN CURRENT (Ip)~A_ ‘sac 31070 BRAIN-TO*SOURCE VOLTAGE (Vogh—V oe . ORAIN CURRENT (Zp)—A sree-arors TS ‘92C8-37565 7 Fig. 10 — Typical forward transconductance as a function Fig. 11 — Switching Time Test Circuit . Os