RFP22N10 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 22A, 100V
  • r DS(ON) = 0.080Ω
  • UIS SOA Rating Curve (Single Pulse)
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • 175 oC Operating Temperature
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

RFP22N10 TO-220AB RFP22N10 RF1S22N10SM TO-263AB F1S22N10 NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. D G S DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE Data Sheet July 1999 File Number 2385.3

Absolute Maximum RatingsTC = 25oC, Unless Otherwise Specified RFP22N10, RF1S22N10SMS UNITS A A Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 (Figure 7) 100 - - V Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 9) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V - - 1 µA VDS = 80V, VGS = 0V, TC = 150oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 22A, VGS = 10V (Figure 8) - - 0.080 Ω Turn-On Time t (ON) VDD = 50Vwwwwwwwww, I D = 11A, R L = 4.5Ω , VGS = 10V, R GS = 25Ω (Figure 11) - - 60 ns Turn-On Delay Time t d(ON) -1 3-n s Rise Time t r -2 4-n s Turn-Off Delay Time t d(OFF) -6 5-n s Fall Time t f -1 8-n s Turn-Off Time t (OFF) - - 120 ns Total Gate Charge Q G(TOT) VGS = 0V to 20V V DD = 80V, ID ≈ 22A, R L = 3.64Ω Ig(REF) = 1mA (Figure 11) - - 150 nC Gate Charge at 10V Q G(10) VGS = 0V to 10V - - 75 nC Threshold Gate Charge Q G(TH) VGS = 0V to 2V - - 3.5 nC Thermal Resistance Junction to Case R θJC - - 1.5 oC/W Thermal Resistance Junction to Ambient R θJA TO-220 and TO-263 - - 62 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 22A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 22A, dISD /dt = 100A/µs - - 200 ns NOTE: 2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%. RFP22N10, RF1S22N10SM

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFP22N10, RF1S22N10SM