RFM15N05 ETC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

3875081 GE SOLID STATE D1 DE I 3875041 0018452 0 Is T-39-//

Logic-Level Power MOSFETs J RFM15NO5L, RFM15NO6L, RFP15NOS5L, RFP15NO6L File Number 1558 Power Logic Level MOSFETs ‘ Tl IAGRAI N-Channel Logic Level ERMINAL DIAGRAM Power Field-Effect Transistors.(L* FET) >

15 A, 50 and 60 V

fos(on): 0.14.0 Features: = Design optimized for § volt gate drive “Can be driven directly trom Q-MOS, N-MOS, TTL Circuits = Compatible with automotive drive requirements = SOA is power-dissipation limited = Nanosecond switching speeds 3 © Linear transfor characteristics s2es-ss7eh ® High input impedance = Majority carrier device N-CHANNEL ENHANCEMENT MODE The RFMISNOSL and RFMISNO6L and the RFP1SNOSL TERMINAL DESIGNATIONS and RFP1SNO6L" are N-channel enhancement-mode RFMISNOSL onan sllicon-gate power field-effect transistors designed for RFMIgNost | SOURCE wrcanse applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers tor © high-power bipolar switching transistors requiring high ‘speed and low gate-drive power. These types can be e operated directly from integrated circuits. eae ‘The RFM-series types are supplied in the JEDEC TO- seceeareen 204AA steel package and the RFP-series types in the RFPISNOSL JEDEC TO-204AA JEDEC TO-220A8 plastic package. RFPISNOGL A Because of space limitations branding (marking) on type — source RFPISNOSL is FISNOSL. and on type RFPISNOBL is on Wf FISNO6L. tilde onan “The RFM and RFP series were formerly RCA yo ta care developmental numbers TA9522 and TA9523, stes-one respectively. JEDEC TO-22088 RFMISNOSL RFMISNOSL —-RFPISNOSL_—_-RFP1SNOSL PUISCD ...ssssseeeeeererereeectom © gg A Derate above Te = 25°C 06 06 0.48 048 wre OPERATING AND STORAGE TEMPERATURE 1.0. .csessescssesseeneeeeeTi Tag 85 to SD ng 998

3875081 G E SOLID STATE O1 DE | 3875081 0018453 2 | T-39-11

———— SSSSSSSSSSSSSSSSSSSLogic-Leve! Power MOSFET RFMI5NO5L, RFM15NO6L, RFP15NO5L, RFP15NO6L ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc = 25°C) unless otherwise specified : Limits : TEST RFM1SNOSL RFMI5NOGL CHARACTERISTIC SYMBOL | CONDITIONS RFPISNOSL RFPISNOGL =| UNITS Drain-Source Breakdown BVoss Io= 1 mA Pf [ . Voltage Vos =0 Gate-Threshold Voltage Vasu Vas = Vos v lo = 1 MA Zero-Gate Voltage Drain Vos = 40 V Current Vos = 50 V. | Te = 125°C vA Vos = 40 V "Vos = 50 V Gate-Source Leakage Current Vos = £10V . Vos = 0 Vos = 5V v lo =15A Vos = 5 V " Static Drain-Source On lo=7.5A 0.14 . Resistance Vos = 5V Forward Transconductance Vos = 10V : lo=7.5A Voo=20v | se(typ) | 40 | eitypy | 40 | | RiseTime Te | TSA 2so('ye) | _926_| 250(typ) | 925 _| Turn-Off Delay Time [tao | Ros = 6.25.0 200(typ) |__ 325 | 200(typ) | __325 ‘| | fatime Tt Vas 5V 2asitye) | 326 | 226(typ) | 326 | Junction-to-Case REM15NO6L_ °cw RFPISNOSL, _ 2.083 RFPISNOSL ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS RFM1SNOSL RFM1SNO6L CHARACTERISTIC SYMBOL TEST CONDITIONS RFP1SNOSL RFPISNO6GL | UNITS [tastes [we [wm | - [f=] lo Piewmteowrnee —[e [evhasrnmm | wom | aon [| " 4 Pulsed: Pulse duration = 300 ys, duty cycle = 2%. ees SS

5081 G E SOLID STATE ~-B9~-

: 387 STATE gy pe flsazsoax oorausy 4 ff o T-SI-// Logic-Level Power MOSFETs —_____ | VE Ae Coho’ BB teies : RFM15NO5L, RFM15NO6L, RFP15NOSL, RFP1S5NO6L Of | Se TEMPERATURE Ui 2c ea a | CURNES MUST OE CERATED | Sieh etary , tee Sere eg earn : eee eee In cee saan ‘ eee cit : DASHES Eee ieee [I| lo *Fosettriom mata ites ocala nin rite mum t Ht JE gus areas Seer erie y ane uM MMs Mess] IS fuMmcooy SEH So ee erie eT | ‘enh. ETE FEHR eT Te nePeE . Sef inlatee ean Miht seve aL es eect See ee eee ee eee tt! | . [oer al ie eT «oss (MAC) CovIRFMISHooL ArPioNoGt faged TMU FEA TH Noss (WAX BoWRFMSNos,RFFSHOSL) Fa eed , ei a EET aad gee cece ee ee edu! o FEE ERS ESS Ape eee {f Te CO caIN"Fo-souRce VoUTAGE eg)-¥ srcunseis2 Fig. 1- Maximum safe oporating arees fora typos. EEE 7 FREESE a caesesesesniaieietiteuteisititsnsiiatatatstasess| Co yasasasstiascseataststeseatateneataesteataeatitasal ° “ease vourteawunt (Wel=* “6 $ % id — case Te" sacs auise JUNCTION TEMPERATURE (1))=*C Fig. 2 - Power dissipation vs. case temperature derating curve Fig. 3 + Typical normalized gate threshold voltage as a function for all types. of junction temperature for all types. agadatatattinatitsticitititetsttsigaapetaeaiatit] 1, WM) PULSE OURATION stone HEHEHE S Ads bee HHH] aaseasHesdtuenieoat test eitiseatutsecesteastasted fe bererarstticr insets Aare aH ie FEET EEE "HTS TEE Hoa a ER Fee eaauceatessesccontesteiiuiteatessnieipisestas ar) ssscesceesctscssssssgessasass?,cvcatacseaeeccessss| S28 Hee HTH fee HEESEEREEREGE tuuaateeziitats dceieronieeetitaay Pe eeeeeeeeeeenini tiitiatasegaesrereeeeeniienen <AEHHTSEEE EEE EEA EEG HEE fame aSeastssstetasuesteattent tagatasitanitaiieataitt legumdiaestessestsnittcutsedy,ccateatesieatianuaseatets eseadtteacastfaid ftocataateeeeaaiaii tt adad tees PS ESELEEERELSESHEHHHED? dHEEREEEEEROEEEEEATHaTiaEE aaaseattuadecaaeceattaai aainatitaisiastiatinatied ci adiesMeopamia ness ceeaseseeueannitaaneeat Fig. 4 - Normalized drain-to-source on resistance vs. junction Fig. 5 - Typical transter characteristics for all types. emporature forall ypes. 998 pe

. 3875081 G E SOLID STATE gi Def 387508) 0018455 & t; T-39-]/ ee Logic-Level Power MOSFETS RFM15NOS5L, RFM15NO6L, RFP15NOSL, RFP15NO6L \\rross IBULSE CunariONs cons HET aAC tee eTELEHEH m I. |CASE TEMPERATURE (Tel o4.\\ THE i onvesounce vourct is Raster Heeaiggt anita aetea nen ‘each By ccatstehantdtasaigateveasateistnisstesacreeae DAA T-s0UNEE VOLTAGE (pg =¥ Fig. 6- Nomad retohing waver for constant gle: | Fig. 7- Typlcal saturation characteristics for all ypes. | Fig. 8 - Typical drain-to-source on resistance as a function Fig. 9 - Capacitance as a function of drain-to-source voltage for drain curren forall ypes. antypes. * POM: sieiLHLERHTTEEEpENG Ne eect roar Xo acsttitecstsssseessssare assaparragssestesl s TO SCOPE . teapeagecaeesecendguitbattaitanieteratesttataiiil Fas cotlueee a HneenaTEeeI EET | Faia 4sieattaneessanteientgeenieiernitantaseatatay I T Fig. 10 - Typical forward transconductance as a function of drain Fig. 11 - Swilching Time Test Circuit. current fora types ee ts