RFP15N05L INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 15A, 50V and 60V
  • r DS(ON) = 0.140Ω
  • Design Optimized for 5V Gate Drives
  • Can be Driven from QMOS, NMOS, TTL Circuits
  • Compatible with Automotive Drive Requirements
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB

Ordering Information

RFP15N05L TO-220AB RFP15N05L RFP15N06L TO-220AB RFP15N06L NOTE: When ordering, use the entire part number. D G S SOURCE DRAIN GATEDRAIN (TAB) Data Sheet July 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N05L RFP15N06L UNITS A A 0.48 0.48 W W/oC Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFP15N05L 50 - - V RFP15N06L 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 7) 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = 48V, VDS = 50V - - 1 µA VDS = 48V, VDS = 50V TC = 125 oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS =±10V, VDS = 0V - - 100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 15A, VGS = 5V (Figures 5, 6) - - 0.140 Ω Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 8) - - 900 pF Output Capacitance C OSS - - 450 pF Reverse-Transfer Capacitance C RSS - - 200 pF Turn-On Delay Time t d(ON) VDD = 30V, ID = 7.5A, RG = 6.25Ω (Figures 10, 11) -1 6 4 0 n s Rise Time t r - 250 325 ns Turn-Off Delay Time t d(OFF) - 200 325 ns Fall Time t f VGS = 5V - 225 325 ns R θJC RFP15N05L, RFP15N06L - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 7.5A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 225 - ns NOTE: 2. Pulsed: pulse duration =≤ 300µs maximum, duty cycle =≤ 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. RFP15N05L, RFP15N06L

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

1130 Brussels, Belgium

FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS