RFD14N06L INTERSIL | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- 14A, 60V
- r DS(ON) = 0.100Ω
- Temperature Compensating PSPICE® Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 175 oC Operating Temperature
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging
Ordering Information
RFD14N06LSM TO-252AA 14N06L RFP14N06L TO-220AB FP14N06L NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A. D G S JEDEC TO-251AA JEDEC TO-252AA JEDEC TO-220AB SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet July 1999
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD14N06L, RFD14N06LSM, RFP14N06LS UNITS Refer to Peak Current Curve A 0.32 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V, Figure 13 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, Figure 12 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V TC = 25oC- - 1 µA TC = 150oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS =±10V - - 100 nA On Resistance r DS(ON) ID = 14A, VGS = 5V - - 0.100 Ω Turn-On Time t ON VDD = 30V, ID = 7A, R L = 4.28Ω , VGS = 5V, R GS = 0.6Ω Figures 10, 18, 19 - - 60 ns Turn-On Delay Time t d(ON) -1 3- n s Rise Time t r -2 4- n s Turn-Off Delay Time t d(OFF) -4 2- n s Fall Time t f -1 6- n s Turn-Off Time t OFF - - 100 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V VDD = 48V, ID = 14A, R L = 3.43Ω Figures 20, 21 - - 40 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V - - 25 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - - 1.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz Figure 14 - 670 - pF Output Capacitance C OSS - 185 - pF Reverse Transfer Capacitance C RSS -5 0- p F Thermal Resistance Junction-to-Case R θJC - - 3.125 oC/W Thermal Resistance Junction-to-Ambient R θJA TO-251 and TO-252 - - 100 oC/W TO-220 - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 14A - - 1.5 V Reverse Recovery Time t rr ISD = 14A, dISD /dt = 100A/µs - - 125 ns RFD14N06L, RFD14N06LSM, RFP14N06LS
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
175 T C–
.SUBCKT RFP14N06L 2 1 3 ; rev 9/15/94 CA 12 8 1.464e-9 CB 15 14 1.64e-9 CIN 6 8 6.17e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 5.68e-9 LSOURCE 3 7 5.35e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 33.1e-3 RGATE 9 20 5.85 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 14.3e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.485 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/46,7))} .MODEL DBKMOD D (RS = 3.8e-1 TRS1 = 1.89e-3 TRS2 = 1.13e-5) .MODEL DPLCAPMOD D (CJO = 25.7e-11 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.935 KP = 18.89 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 7.18e-4 TC2 = 1.53e-6) .MODEL RDSMOD RES (TC1 = 4.45e-3 TC2 = 2.9e-5) .MODEL RSCLMOD RES (TC1 = 2.8e-3 TC2 = 6.0e-6) .MODEL RVTOMOD RES (TC1 = -1.7e-3 TC2 = -2.0e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.55 VOFF= -1.55) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.55 VOFF= -3.55) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.55 VOFF= 2.45) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.45 VOFF= -2.55) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 7 3 17 18 RDRAIN ESCL RSCL1 RSCL2 51 RFD14N06L, RFD14N06LSM, RFP14N06L
All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee
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TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFD14N06L, RFD14N06LSM, RFP14N06L