RFD14N05L_04 FAIRCHILD | Alldatasheet

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Technical content

Features

  • 14A, 50V r DS(ON) = 0.100Ω  Temperature Compensating PSPICE ® Model  Can be Driven Directly from CMOS, NMOS, and TTL Circuits  Peak Current vs Pulse Width Curve  UIS Rating Curve 1 7 5 oC Operating Temperature  Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-251AA JEDEC TO-252AA JEDEC TO-220AB

Ordering Information

RFD14N05LSM TO-252AA 14N05L RFP14N05L TO-220AB F14N05L NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A. G D S SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet November 2004

©2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD14N05L, RFD14N05LSM, RFP14N05L UNITS Refer to Peak Current Curve A 0.32 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V, Figure 13 50 - - V Gate Threshold Voltage V GS(TH) VGS = VDS, ID = 250µA, Figure12 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = 40V, VGS = 0V - - 1 µA VDS = 40V, VGS = 0V, TC = 150oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS = ±10V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 14A, VGS = 5V, Figures 9, 11 - - 0.100 Ω Turn-On Time t (ON) VDD = 25V, ID = 7A, RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω --6 0n s Turn-On Delay Time t d(ON) -1 3 - n s Rise Time t r -2 4 - n s Turn-Off Delay Time t d(OFF) -4 2 - n s Fall Time t f -1 6 - n s Turn-Off Time t (OFF) - - 100 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 40V, ID = 14A, RL = 2.86Ω Figures 20, 21 - - 40 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V - - 25 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - - 1.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz Figure 14 - 670 - pF Output Capacitance C OSS - 185 - pF Reverse Transfer Capacitance C RSS -5 0 - p F Thermal Resistance Junction to Case R θJC - - 3.125 oC/W Thermal Resistance Junction to Ambient R θJA TO-251 and TO-252 - - 100 oC/W RθJA TO-220 - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 14A - - 1.5 V Diode Reverse Recovery Time t rr ISD = 14A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD14N05L, RFD14N05LSM, RFP14N05L

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

2.5 PULSE DURATION = 80µs

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

©2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1 .SUBCKT RFP14N05L 2 1 3 ; rev 9/15/94 CA 12 8 1.464e-9 CB 15 14 1.64e-9 CIN 6 8 6.17e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 5.68e-9 LSOURCE 3 7 5.35e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 33.1e-3 RGATE 9 20 5.85 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 14.3e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.485 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/46,7))} .MODEL DBKMOD D (RS = 3.8e-1 TRS1 = 1.89e-3 TRS2 = 1.13e-5) .MODEL DPLCAPMOD D (CJO = 25.7e-11 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.935 KP = 18.89 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 7.18e-4 TC2 = 1.53e-6) .MODEL RDSMOD RES (TC1 = 4.45e-3 TC2 = 2.9e-5) .MODEL RSCLMOD RES (TC1 = 2.8e-3 TC2 = 6.0e-6) .MODEL RVTOMOD RES (TC1 = -1.7e-3 TC2 = -2.0e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.55 VOFF= -1.55) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.55 VOFF= -3.55) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.55 VOFF= 2.45) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.45 VOFF= -2.55) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. GATE LGATE RGATE EVTO 12 13 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 7 3 17 18 RDRAIN ESCL RSCL1 RSCL2 51 RFD14N05L, RFD14N05LSM, RFP14N05L

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I13 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™Across the board. Around the world.™ The Power Franchise Programmable Active Droop™