RFD14N05 FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • 14A, 50V
  • rDS(ON) = 0.100W
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175oC Operating Temperature
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-251AA JEDEC TO-252AA JEDEC TO-220AB

Ordering Information

RFD1 4N05SM TO-252AA D14N05 RFP1 4N05 TO-220AB RFP14N05 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A. G D S SOURCE DRAIN (FLANGE) GATE DRAIN GATE SOURCE DRAIN (FLANGE) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet January 2002

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFD14N05, RFD14N05SM, RFP14N05 UNITS Refer to Peak Current Curve A 0.32 W W/oC Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress on ly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1.T J = 25oC to 150 oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250 mA, VGS = 0V (Figure 9) 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BV DSS , VGS = 0V - - 25 mA VDS = 0.8 x Rated BV DSS, VGS = 0V, TC = 150oC - - 250 mA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 14A, V GS = 10V, (Figure 11) - - 0.100 W Turn-On Time tON VDD = 25V, I D » 14A, V GS = 10V, RGS = 25 W, RL = 1.7 W (Figure 13) - - 60 ns Turn-On Delay Time td(ON) - 14 - ns Rise Time tr - 26 - ns Turn-Off Delay Time td(OFF) - 45 - ns Fall Time tf - 17 - ns Turn-Off Time tOFF - - 100 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 40V, I D = 14A, RL = 2.86 W Ig(REF) = 0.4mA (Figure 13) - - 40 nC Gate Charge at 5V Qg(10) VGS = 0V to 10V - - 25 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 1.5 nC Input Capacitance CISS VDS = 25V, V GS = 0V, f = 1MHz (Figure 12) - 570 - pF Output Capacitance COSS - 185 - pF Reverse Transfer Capacitance CRSS - 50 - pF Thermal Resistance Junction to Case RqJC - - 3.125 oC/W Thermal Resistance Junction to Ambient RqJA TO-251 and TO-252 - - 100 oC/W RqJA TO-220 - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 14A - - 1.5 V Diode Reverse Recovery Time trr ISD = 14A, dI SD/dt = 100A/ ms - - 125 ns NOTES: 2.Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2%. 3.Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). RFD14N05, RFD14N05SM, RFP14N05

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1 FIGURE 18.GATE CHARGE TEST CIRCUIT FIGURE 19.GATE CHARGE WAVEFORMS Test Circuits and Waveforms (Continued) RL VGS + VDS VDD DUT IG(REF) VDD Qg(TH) VGS = 2V Qg(10) VGS = 10V Qg(TOT) VGS = 20V VDS VGS IG(REF) RFD14N05, RFD14N05SM, RFP14N05

©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Rev. B1 .SUBCKT RFP14N05 2 1 3 ;rev 9/12/94 CA 12 8 8.84e-10 CB 15 14 9.34e-10 CIN 6 8 5.2e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 62.87 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.34e-9 LSOURCE 3 7 3.79e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 2.2e-3 RGATE 9 20 5.64 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 42.3e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.82 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/50,6))} .MODEL DBKMOD D (RS = 4.15e-1TRS1 = 3.73e-3TRS2 = -3.21e-5) .MODEL DPLCAPMOD D (CJO = 26.2e-11IS = 1e-30N = 10) .MODEL MOSMOD NMOS (VTO = 3.91KP = 12.68IS = 1e-30N = 10TOX = 1L = 1uW = 1u) .MODEL RBKMOD RES (TC1 = 7.73e-4TC2 = 2.12e-6) .MODEL RDSMOD RES (TC1 = 5.0e-3TC2 = 2.53e-5) .MODEL RSCLMOD RES (TC1 = 2.05e-3 TC2 = 1.35e-5) .MODEL RVTOMOD RES (TC1 = -4.44e-3TC2 = -6.45e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5ROFF = 0.1VON = -5.29VOFF= -3.29) .MODEL S1BMOD VSWITCH (RON = 1e-5ROFF = 0.1VON = -3.29VOFF= -5.29) .MODEL S2AMOD VSWITCH (RON = 1e-5ROFF = 0.1VON = -2.25VOFF= 2.75) .MODEL S2BMOD VSWITCH (RON = 1e-5ROFF = 0.1VON = 2.75VOFF= -2.25) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options ; written by William J. Hepp and C. Frank Wheatley. EVTO CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RVTO VBAT IT VTO DPLCAP 7 3 17 18 RDRAIN ESCL RSCL1 RSCL2 51 S1A S2A S2BS1B 12 1513 -18 8RGATE GATE LGATE 2091 ESG 11 + RFD14N05, RFD14N05SM, RFP14N05

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ Rev. I3 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOSTM EnSignaTM PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™