RFM12N18 INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- 12A, 180V and 200V
- r DS(ON) = 0.250Ω
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Formerly developmental type TA09293. Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
RFM12N18 TO-204AA RFM12N18 RFM12N20 TO-204AA RFM12N20 RFP12N18 TO-220AB RFP12N18 RFP12N20 TO-220AB RFP12N20 NOTE: When ordering, use the entire part number. D G S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) SOURCE DRAIN GATEDRAIN (TAB) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1461.2 RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V , 0.250 Ohm, N- Channel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N- Channel Power MOS- FETs, TO- 204AA, TO- 220AB) /Creator /DOCIN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS A A 100 0.8 100 0.8 0.6 0.6 W W/oC Maximum Temperature for Soldering 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFM12N18, RFP12N18 180 - - V RFM12N20, RFP12N20 200 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -- 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 12A, VGS = 10V - - 3.0 V Turn-On Delay Time t d(ON) VDD = 100V, ID ≈ 6A, RG = 50Ω , R L = 16.5Ω , VGS = 10V, (Figures 10, 11, 12) -3 5 5 0 n s Rise Time t r - 130 200 ns Turn-Off Delay Time t d(OFF) - 120 180 ns Fall Time t f - 105 160 ns Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 9) - - 1700 pF Output Capacitance C OSS - - 600 pF Reverse Transfer Capacitance C RSS - - 300 pF Thermal Resistance Junction to Case R θJC RFM12N18, RFM12N20 - - 1.25 oC/W RFP12N18, RFP12N20 - - 1.67 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 6A - - 1.4 V Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 325 - ns NOTE: 2. Pulsed: pulse width≤ 300µs maximum, duty cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFM12N18, RFM12N20, RFP12N18, RFP12N20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs