RFP12N10L INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 12A, 100V
  • r DS(ON) = 0.200Ω
  • Design Optimized for 5V Gate Drives
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits
  • Compatible with Automotive Drive Requirements
  • SOA is Power-Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol Packaging JEDEC TO-220AB

Ordering Information

RFP12N10L TO-220AB F12N10L NOTE: When ordering, include the entire part number. D G S SOURCE DRAIN GATEDRAIN (TAB) Data Sheet July 1999 File Number 1512.3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250mA, VGS = 0V 100 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250mA (Figure 7) 1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = 65V, VDS = 80V - - 1 µA VDS = 65V, VDS = 80V T C = 125oC- - 5 0 µA Gate to Source Leakage Current I GSS VGS = 10V, VDS = 0V - - 100 µA Drain to Source On Resistance (Note 2) r DS(ON) ID = 12A, VGS = 5V (Figures 5, 6) - - 0.2 Ω Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 8) - - 900 pF Output Capacitance C OSS - - 325 pF Reverse-Transfer Capacitance C RSS - - 170 pF Turn-On Delay Time t d(ON) ID = 6A, VDD = 50V, RG = 6.25Ω , VGS = 5V (Figures 9, 10, 11) -1 5 5 0n s Rise Time t r - 70 150 ns Turn-Off Delay Time t d(OFF) - 100 130 ns Fall Time t f - 80 150 ns Thermal Resistance Junction to Case R θJC RFP12N10L 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 6A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 4A, dISD /dt = 50A/µs - 150 - ns NOTES: 2. Pulsed: pulse duration = 80µs max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP12N10L

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. FORWARD BIAS OPERATING AREA FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN FIGURE 6. NORMALIZED DRAIN TO SOURCE ON

0.1 ID, DRAIN CURRENT (A)

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS