RFP12N10L FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • 12A, 100V DS(ON) = 0.200 Ω
  • Design Optimized for 5V Gate Drives
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits
  • Compatible with Automotive Drive Requirements
  • SOA is Power-Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol Packaging JEDEC TO-220AB

Ordering Information

RFP12N10L TO-220AB F12N10L NOTE: When ordering, include the entire part number. D G S SOURCE DRAIN GATEDRAIN (TAB) Data Sheet January 2002

©2002 Fairchild Semiconductor Corporation RFP12N10L Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified RFP12N10L UNITS DS 100 V Drain to Gate Voltage (R GS = 1M DGR 100 V D 12 A DM 30 A GS ±10 V D 60 W Above T C = 25 o o C T STG -55 to 150 o C Maximum Temperature for Soldering L pkg 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 125 o Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250mA, V GS = 0V 100 - - V Gate to Threshold Voltage V GS(TH) V GS = V DS , I D = 250mA (Figure 7) 1 - 2 V Zero Gate Voltage Drain Current I DSS V DS = 65V, V DS = 80V - - 1 µ A V DS = 65V, V DS = 80V T C = 125 o C- - 5 0 µ A Gate to Source Leakage Current I GSS V GS = 10V, V DS = 0V - - 100 µ A Drain to Source On Resistance (Note 2) r DS(ON) I D = 12A, V GS = 5V (Figures 5, 6) - - 0.2 Ω Input Capacitance C ISS V GS = 0V, V DS = 25V, f = 1MHz (Figure 8) - - 900 pF Output Capacitance C OSS - - 325 pF Reverse-Transfer Capacitance C RSS - - 170 pF Turn-On Delay Time t d(ON) I D = 6A, V DD = 50V, R G = 6.25 Ω V GS = 5V (Figures 9, 10, 11) -1 5 5 0n s Rise Time t r - 70 150 ns Turn-Off Delay Time t d(OFF) - 100 130 ns Fall Time t f - 80 150 ns Thermal Resistance Junction to Case R θ JC RFP12N10L 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD I SD = 6A - - 1.4 V Diode Reverse Recovery Time t rr I SD = 4A, dI SD /dt = 50A/ µ s - 150 - ns NOTES: 2. Pulsed: pulse duration = 80 µ s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP12N10L

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. FORWARD BIAS OPERATING AREA FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN FIGURE 6. NORMALIZED DRAIN TO SOURCE ON

0.1 ID, DRAIN CURRENT (A)

FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™