RFM12N08 INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 12A, 80V and 100V
- r DS(ON) = 0.200Ω
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
RFM12N08 TO-204AA RFM12N08 RFM12N10 TO-204AA RFM12N10 RFP12N08 TO-220AB RFP12N08 RFP12N10 TO-220AB RFP12N10 NOTE: When ordering, use the entire part number. D G S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) SOURCE DRAIN GATEDRAIN (TAB) October 1998 File Number 1386.2 [ /Title (RFM12 N08, RFM12 N10, RFP12 N08, RFP12 N10) /Sub- ject (12A, 80V and 100V , 0.2 Ohm, N-Chan- nel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N- Chan- nel Power MOS- FETs, TO- 204AA, TO- 220AB) /Cre- Data Sheet
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS A A 0.6 0.6 0.48 0.48 W W/oC Maximum Temperature for Soldering 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 80 - - VRFM12N08, RFP12N08 RFM12N10, EFP12N10 100 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 12A, VGS = 10V (Figures 6, 7) - - 0.200 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 12A, VGS = 10V - - 2.4 V Turn-On Delay Time t d(ON) VDD = 50V, ID = 6A, RG = 50Ω, VGS = 10V, RL = 8Ω, (Figures 10, 11, 12) -4 5 7 0 n s Rise Time t r - 250 375 ns Turn-Off Delay Time t d(OFF) - 85 130 ns Fall Time t f - 100 150 ns Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) - - 850 pF Output Capacitance C OSS - - 300 pF Reverse Transfer Capacitance C RSS - - 150 pF Thermal Resistance Junction to Case R θJC RFM12N08, RFM12N10 - - 1.67 oC/W RFP12N08, RFP12N10 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Voltage (Note 2) V SD ISD = 6A - - 1.4 V Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 150 - ns NOTE: 2. Pulse test: Pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFM12N08, RFM12N10, RFP12N08, RFP12N10
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR