RFD12N06RLE INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 12A, 60V
  • r DS(ON) = 0.135Ω
  • Electrostatic Discharge Protected
  • UIS Rating Curve (Single Pulse)
  • Design Optimized for 5V Gate Drive
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-251AA JEDEC TO-252AA JEDEC TO-220AB

Ordering Information

RFD12N06RLE TO-251AA 12N6LE RFD12N06RLESM TO-252AA 12N6LE RFP12N06RLE TO-220AB 12N06RLE NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A. G S D SOURCE DRAIN GATEDRAIN (FLANGE) DRAIN (FLANGE) GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN July 1999 File Number 2407.4Data Sheet [ /Title (RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL /Sub- ject (12A, 60V , 0.135 Ohm, Chan- nel, Logic Level, Power MOS- FETs) /Autho r () /Key- words (Inter- sil Corpo- ration, Chan- nel, Logic Level, Power MOS-

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE UNITS A A Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2) Refer to UIS SOA Curve 2k V Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 60 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS ,VGS = 0V, TC = 150oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS = -5 to 10V - - ±10 µA Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 5V (Figures 7, 8) - - 0.135 Ω ID = 12A, VGS = 4V - - 0.160 Ω Turn-On Time t (ON) VDD = 30V, ID ≈ 6A, RL = 5Ω, R GS = 6.25Ω, VGS = 5V, (Figures 15, 16) - - 60 ns Turn-On Delay Time t d(ON) -1 2- n s Rise Time t r -2 0- n s Turn-Off Delay Time t d(OFF) -2 4- n s Fall Time t f -1 2- n s Turn-Off Time t (OFF) - - 60 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 48V, ID = 12A, R L = 4Ω, IG(REF) = 0.25mA (Figures 17, 18) - - 40 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V - - 20 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V - - 1.5 nC Thermal Resistance Junction to Case R θJC - - 3.125 oC/W Thermal Resistance Junction to Ambient RθJA TO-251AA and TO-252AA - - 100 oC/W TO-220AB - - 62 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 12A - - 1.2 V Reverse Recovery Time t rr ISD = 12A, dISD /dt = 100A/µs - - 200 ns NOTES: 2. Pulse test: pulse width≤ 300ms, duty cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED DRAIN TO SOURCE ON FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

0.7 BREAKDOWN VOLTAGE

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE