RFP10P15 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • -10A, -150V
  • r DS(ON) = 0.500Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging TO-220AB

Ordering Information

RFP10P15 TO-220AB RFP10P15 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN GATEDRAIN (TAB) Data Sheet October 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10P15 UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 -150 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS, ID = 250µA -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source On Voltage (Note 2) V DS(ON) ID = 10A, VGS = -10V - - -5.0 V Drain to Source On Resistance (Note 2) r DS(ON) ID = 10A, VGS = -10V, (Figures 6, 7) - - 0.500 Ω Turn-On Delay Time t d(ON) ID ≈ 10A, VDS = -75V, RG = 50Ω RL = 7.5Ω, VGS = -10V (Figures 10, 11, 12) -2 4 5 0 n s Rise Time t r - 74 150 ns Turn-Off Delay Time t d(OFF) - 138 225 ns Fall Time t f - 61 100 ns Input Capacitance C ISS VGS = 0V, VDS = -25V f = 1MHz (Figure 9) - - 1700 pF Output Capacitance C OSS - - 600 pF Reverse Transfer Capacitance C RSS - - 350 pF Thermal Resistance, Junction to Case R θJC RFM10P12, RFM10P15 - - 1.25 oC/W RFP10P12, RFP10P15 1.67 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -10A - - 1.4 V Reverse Recovery Time t rr ISD = -10A, dlSD/dt = 100A/µs - 210 - ns NOTES: 2. Pulsed: Pulse Duration = 300 µs Max, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFP10P15

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFP10P15