RFP10N15 INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 10A, 150V
- r DS(ON) = 0.300Ω
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging TO-220AB
Ordering Information
RFP10N15 TO-220AB RFP10N15 NOTE: When ordering, include the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN March 1999 File Number 1445.3Data Sheet
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 UNITS Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 150 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC- - 2 5 m A Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance(Note 2) r DS(ON) ID = 10A, VGS = 10V, (Figures 6, 7) - - 0.300 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 10A, VGS = 10V - - 3.0 V Turn-On Delay Time t d(ON) ID ≈ 5A, VDD = 75V, RG = 50Ω, VGS = 10V, RL = 14.7Ω (Figures 10, 11, 12) -4 0 6 0n s Rise Time t r - 165 250 ns Turn-Off Delay Time t d(OFF) - 90 135 ns Fall Time t f - 90 135 ns Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 850 pF Output Capacitance C OSS - - 230 pF Reverse Transfer Capacitance C RSS - - 100 pF Thermal Resistance Junction to Case RFP10N15 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 5A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 200 - ns NOTES: 2. Pulse Test: Pulse Width≤ 300µs, Duty Cycle≤ 2% 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFP10N15
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FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS