RFP-375375N6X50-2 ANAREN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- DC – 2.5 GHz
- 200 Watts
- Aluminum Nitride (AlN) Ceramic
- T erminal for Lead Attachment
- Non-Nichrome Resistive Element
- Low VSWR
- 100% Tested Ω Note: XXX denotes value. Notes: Tolerance is ±.010, unless otherwise specified. Operating temperature is -55°C to +150°C (see chart). Designed to meet or exceed applicable portions of MIL-E-5400. All dimensions are in inches. Specifications subject to change without notice. Electrical Specifications Resistance Value: 50 ohms, ±2% Frequency Range: DC - 2.5 GHz Power: 200 Watts General Specifications Resistive Element: Thick film Substrate: Aluminum nitride ceramic Terminals: Tin/Lead, 90/10 over nickel Available on Tape and Reel for Pick and Place Manufacturing. VER. 12/5/01
Aluminum Nitride Chip Terminations Model RFP-375375N6X50-2 Typical Performance
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Sales Desk Europe: Voice: (+44) 23 92 232392 Fax: (+44) 23 92 251369 Power Derating Suggested Mounting Procedures SUGGESTED STRESS RELIEF METHODS SCALE: BOARD LOWER THAN LEAD. .025 (2 PLACES) MIN. 1. Make sure that the devices are mounted on flat surfaces (.001” under the device) to optimize the heat transfer. 2. Position device on mounting surface and solder in place using an SN96 type solder. 3. Solder leads in place using an SN63 type solder with a controlled temperature iron (700°F). CASE TEMPERATURE — °C % OF RATED POWER 150125100755025 100 Available on Tape and Reel for Pick and Place Manufacturing.