RFM8N18 ETC | Alldatasheet

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Logic-Level Power MOSFETs — RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 : N-Channel Logic Level Power Field-Effect Transistors (L? FET) . 12 A, 80 V and 100 V ° fos(on): 0.52 . * Features; © Design optimized for 5 volt gate drive = Can bg driven directly from Q-MOS, N-MOS, TTL Circuits ® Compatible with automotive drive requirements ® SOA is power-dissipation limited : ™ Nenosecond switching speeds ‘© Linear transfer characteristics SICH “331 “High input impedance ‘© Mejority cartier device N-CHANNEL ENHANCEMENT MODE . TERMINAL DESIGNATIONS Freon see source vey The RFMBN18L and RFMEN20L and the RFPEN18L and o) RFP8N20L are n-channel enhancement-mode silicon-gate o power field-effect transistors specifically designed for use p with togic level (5 volt) driving sources in applications such eat as programmable controllers, automotive switching, and ‘etete ares . solenold drivers. This performance is accomplished through yas . 8 special gate oxide design which provides full rated con- YEDEC TO-204AA C duction at gate biases in the 3-5 volt range, thereby facilitat- paepanteL Ing true on-off power control directly from logic circult —_RFPEN20L supply voltages. source The RFM-series types are supplied in the JEDEC TO- —= = ' 204AA steel package and the RFP-series types in the oie onsan JEDEC TO-220A8 plastic package. —— st The RFM and RFP series were formerly RCA developmental — care numbers TA9S34 and TA9535. Tor view ress JEDEC TO-220A8 REMENTSL — REMBN20L RFPONISL —-RFPSN20 DRAIN-GATE VOLTAGE (Ra=1 MM) .... Voor 180, 200 180, 200 v PUsCd ooeeeeesessess fom ee Fk : POWER DISSIPATION @ Te=25°C 0... Pr % 5 Ej Ey w Derate above Te=25*C 08 06 048 04a wee OPERATING ANO STORAGE TEMPERATURE vocsscsecsecsecses Te Tag $80 HS te

‘. cee ee | ve Bsa7soa1 0018441 & U pepe). . 3875081 G E SOLID STATE Ule 18441 T-39-) 1 —.._Logle-Level Power MOSFETs RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L a ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C unless otherwise specilied. : ° . TEST REMBNTOL REMBN20L chanactenisric sewsot | consiions : [min Tmax. | Min. Tax. | Drain-Source Breakdown Voltage BY Ig=t mA Vv _— [Rarseusrerescewnveteos [Ber Tm fe ee Gate Threshold Voit Vas Vc v [Snerrenaeverecs Te ea ‘Zero Gate Voltage Drain Current Vos=145 V ° | vey [= [2 Po Ta | To=125°C eisy [2 | =| . Vos=160.V | Gate-Source Leakage Current Vos=£10V 7A [Ser sowerteveercuen [| weer [= el -TeT| & Drain-Source On Volt Vos(on)* fod A Vos*5 V : Vos5 V Forward Transconductance Vos=10-V [ferme rarscensosanes fT ae [so [= [se | [Input Capacitance TCs | Cos25V «| ~— | 000 | — | 900] | Output Capacitance Tw | Vasey = [| 250 | [250 | pr Reverse-Transfer Capacitance [Ge | IM 100 = 00 | Voo=50V | 15(typ) [45 | 1S(typ) | 45 [Risetime eo, | 45(typ) | 150_| 45(typ) | 150_| . | Tumn-On Delay Time oft) | atone, — | aooityey | 135 | s00(tye) | 135 _| : Fall Time [i | Vos5v__[eoutyp) {105 | coityp) [105 | +5 Thermal Resistance RFMBNi6L, 1.67 1.67 ; ntinwioeae | Seaver | [eT = [ery . REPGNIGL, 2.083 Reem | — | 8 | = “Pulsed: Pulse duration = 300 us max., duty cycla = 2%. ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST REMENTEL “ RFM8N20L cnanacTenismic spot | contiions : : { MIN. “T MAX. [MIN | MAX._| ee ee ee Reverse Recovery Time te lad R 250(t 250 : [Rewsericoney time TT aatitdys | 0 [ev “Pulse Test: Width = 300 ya, duly cycle = 2%. oo SS

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_ = ate SE Be EET pA HTL HEPES TTE NHS atgatadsaseateddaseseastsiaseaeasiaeanintastatatey [ETT TTT NH cof HT HHH © 9205-37806 “puea-sren Fig. 2— Powor vs. temperature derating curve for Fig. 9 Typical normalized gate threshold voltage as function an types. offunction tomporature lor al ype ~ SCUMMELEELesaateatestscesteissscsastetiztist} ros IBEaSEGEEsEStOsSSeEEEEEEET ET a2 HAH Ee Poe sastssseaitiatsiceaticieerteatiise sem toeetteaasl Fig, 4 Normalized drain-to-source on resistance t 9. 81) ination temeritee ‘ors ape es tance to ‘Fig. & 'ypical transter characteristics for all types. 986 EEE

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. RFM8N18L, RFM8N20L, RFP8N18L, RFPEN2O. DOMAIN TO-40UCE VOLTA gg} i Fig. 6 - Normalized switching waveforms forconstant gate-current Fig. 7 — Typical saturation characteristics for all types. drive. aH Gof tr TR LT # soo HITHER a tae ieee ie ieee: Senet aah Seine ouincmneat gia: OmAW-T0~ROURGE VOLTAGE (Yeg=V Fig. 8 — Typical drain-to-source on resistance as a function Fig. 9 ~ Capacitance as @ function of drain-to-source of rain current for al ype, voltage fora types. SE ETRE Te eeaeeTtTE 3, HE eR eet eee HetE-ttH| 1 ov le HTH HHH purse ourarion-eoys FH ! toa Fig. 10 — Typical forward transconductance as @ function of erain curren forall typos Fig. 11 — Suitching Timo Test Cireult ——_— 387