RFM6N45 INTERSIL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- 6A, 450V and 500V
- r DS(ON) = 1.250Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedence
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipo- lar switching transistors requiring high speed and low gate drive power. These types can be operated directly from inte- grated circuits. Formerly developmental type TA17425. Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
NOTE: When ordering, include the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) SOURCE DRAIN GATE DRAIN (FLANGE) September 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1494.2 RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs [ /Title (RFM6 N45, RFP6N4 RFP6N5 /Subject (6A, 450V and 500V , 1.250 Ohm, N- Channel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N- Channel Power MOS- FETs, TO- 204AA, TO- 220AB) /Creator /DOCIN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM6N45 RFP6N45 RFP6N50 UNITS Maximum Temperature for Soldering 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V 450 - - VRFM6N45, RFP6N45 RFP6N50 500 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 125oC -- 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance(Note 2 ) r DS(ON) ID = 6A, VGS = 10V, (Figures 6, 7) - - 1.250 Ω Drain to Source On-Voltage (Note 2) V DS(ON) ID = 6A, VGS = 10V - - 7.50 V Turn-On Delay Time t d(ON) ID = 3A, VDD = 250V, RG =5 0Ω, VGS = 10V, RL = 81Ω (Figures 10, 11, 12) -1 5 4 5n s Rise Time t r -4 0 8 0n s Turn-Off Delay Time t d(OFF) - 190 300 ns Fall Time t f - 60 100 ns Input Capacitance C ISS VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) - - 1500 pF Output Capacitance C OSS - - 250 pF Reverse Transfer Capacitance C RSS - - 200 pF Thermal Resistance Junction to Case R θJC RFM6N45 - - 1.25 oC/W RFP6N45, RFP6N50 1.67 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 3A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 800 - ns NOTES: 2. Pulsed test: Pulse width≤ 300µs duty cycle≤ 2% 3. Repetitive rating: pulse width limited by maximum junction temperature. RFM6N45, RFP6N45, RFP6N50
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS