RFM3N45 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 3A, 450V and 500V
  • r DS(ON) = 3Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB

Ordering Information

NOTE: When ordering, use the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet October 1998 File Number 1384.2 [ /Title /Sub- ject () /Autho r () /Key- words /Cre- ator () /DOCI NFO pdf- mark /Page- Mode /Use- Out- lines /DOC- VIEW pdf- mark

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Maximum Temperature for Soldering 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFM3N45, RFP3N45 450 - - V RFM3N50, RFP3N50 500 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 7) 2.0 - 4.0 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 3A, VGS = 10V - - 9.0 V Turn-On Delay Time t d(ON) VDD = 250V, ID ≈ 1.5A, RG = 50Ω , VGS = 10V R L = 165Ω (Figures 10, 11, 12) -3 0 4 5 n s Rise Time t r -4 0 6 0 n s Turn-Off Delay Time t d(OFF) - 90 135 ns Fall Time t f -5 0 7 5 n s Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz - - 750 pF Output Capacitance C OSS - - 150 pF Reverse Transfer Capacitance C RSS - - 100 pF Thermal Resistance, Junction to Case R θJC RFM3N45, RFM3N50 - - 1.67 oC/W RFP3N45, RFP3N50 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 1.5A - - 1.4 V Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 800 - ns NOTES: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFM3N45, RFM3N50, RFP3N45, RFP3N50

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM3N45, RFM3N50, RFP3N45, RFP3N50 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.

  • 3A, 450V and 500V
  • r DS(ON) = 3Ω
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AA JEDEC TO-220AB

NOTE: When ordering, use the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet October 1998 File Number 1384.2 [ /Title /Sub- ject () /Autho r () /Key- words /Cre- ator () /DOCI NFO pdf- mark /Page- Mode /Use- Out- lines /DOC- VIEW pdf- mark

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Maximum Temperature for Soldering 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFM3N45, RFP3N45 450 - - V RFM3N50, RFP3N50 500 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 7) 2.0 - 4.0 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS , VGS = 0V, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 3A, VGS = 10V - - 9.0 V Turn-On Delay Time t d(ON) VDD = 250V, ID ≈ 1.5A, RG = 50Ω , VGS = 10V R L = 165Ω (Figures 10, 11, 12) -3 0 4 5 n s Rise Time t r -4 0 6 0 n s Turn-Off Delay Time t d(OFF) - 90 135 ns Fall Time t f -5 0 7 5 n s Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz - - 750 pF Output Capacitance C OSS - - 150 pF Reverse Transfer Capacitance C RSS - - 100 pF Thermal Resistance, Junction to Case R θJC RFM3N45, RFM3N50 - - 1.67 oC/W RFP3N45, RFP3N50 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 1.5A - - 1.4 V Reverse Recovery Time t rr ISD = 4A, dISD /dt = 100A/µs - 800 - ns NOTES: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFM3N45, RFM3N50, RFP3N45, RFP3N50