RFL2N05 INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 2A, 50V and 60V
- r DS(ON) = 0.95Ω
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. Symbol Packaging JEDEC TO-205AF
Ordering Information
NOTE: When ordering, include the entire part number. G D S DRAIN (CASE) SOURCE GATE January 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1497.2 RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL2N05 RLF2N06 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 RFL2N05 50 - - V RFL2N06 60 - - V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = 0.8 x Rated BVDSS , TC = 25oC --1 µA TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On Voltage (Note 2) V DS(ON) ID = 1A, VGS = 10V - - 0.95 V ID = 2A, VGS = 10V - - 2.0 V ID = 4A, VGS = 15V - - 4.8 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 1A, VGS = 10V, (Figures 6, 7) - - 0.95 Ω Forward T ransconductance (Note 2) g fs ID = 1A, VDS = 10V, (Figure 10) 400 - - S Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 30V, RGS = 50Ω , VGS = 10V, (Figures 11, 12, 13) - 6 15 ns Rise Time t r -1 4 3 0n s Turn-Off Delay Time t d(OFF) -1 6 3 0n s Fall Time t f -3 0 5 0n s Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 200 pF Output Capacitance C OSS - - 85 pF Reverse-Transfer Capacitance C RSS - - 30 pF Thermal Resistance Junction to Case R θJC -- 1 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 1A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 2A, dISD /dt = 50A/µs - 100 - ns NOTE: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. RFL2N05, RFL2N06
FIGURE 12. SWITCHING TIME TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS