RFL1P08 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 1A, -80V and -100V
  • r DS(ON) = 3.65Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device

Description

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Formerly developmental type TA9400. Symbol Packaging JEDEC TO-205AF

Ordering Information

NOTE: When ordering, include the entire part number. G D S DRAIN (CASE) SOURCE GATE July 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1535.2 RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1P08 RFL1P10 UNITS Maximum Temperature for Soldering AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 RFL1P08 -80 - - V RFL1P10 -100 Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS, VGS = 0V - - -1 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC 25 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0 - - ±100 nA Drain to Source On-Voltage (Note 2) V DS(ON) ID = 1A, VGS = -10V - - -3.65 V Drain to Source On Resistance (Note 2) r DS(ON) ID = 1A, VGS = -10V (Figures 6, 7) - - 3.65 Ω Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = -50V R G = 50Ω VGS = -10V R L = 47Ω (Figures 10, 11, 12) - 7 25 ns Rise Time t r -1 5 4 5 n s Turn-Off Delay Time t d(OFF) -1 4 4 5 n s Fall Time t f -1 1 2 5 n s Input Capacitance C ISS VGS = 0V, VDS = -25V f = 1MHz (Figure 9) - - 150 pF Output Capacitance C OSS - - 80 pF Reverse-Transfer Capacitance C RSS - - 30 pF Thermal Resistance Junction to Case R θJC -- 1 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -1A - - -1.4 V Diode Reverse Recovery Time t rr ISD = -1A, dISD /dt = 50A/µs - 135 - ns NOTES: 2. Pulse test: pulse width≤ 300µs maximum, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by mazimum junction temperature. RFL1P08, RFL1P10