RFL1N12 INTERSIL | Alldatasheet
Document overview
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Technical content
Features
- 1A, 120V and 150V
- r DS(ON) = 1.9Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. Symbol Packaging JEDEC TO-205AF
Ordering Information
NOTE: When ordering, use the entire part number. G D S DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 1444.2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N12 RFL1N15 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFL1N12 120 - - V RFL1N15 150 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) 2 - 4 V Zero Gate Voltage Drain Current I DSS VDS = 0.8 x Rated BVDSS , TC = 25oC- - 1 µA TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Voltage (Note 2) V DS(ON) ID =1A, VGS =10V - - 1.9 V ID = 2A, VGS = 10V - - 6.3 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 1A, VGS = 10V, (Figures 6, 7) - - 1.9 Ω Forward Transconductance (Note 2) g fs ID = 1A, VDS = 10V, (Figure 10) 400 - - S Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 75V, RGS = 50Ω VGS = 10V, (Figures 11, 12, 13) -1 7 2 5 n s Rise Time t r -3 0 4 5 n s Turn-Off Delay Time t d(OFF) -3 0 4 5 n s Fall Time t f -3 0 5 0 n s Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 200 pF Output Capacitance C OSS - - 80 pF Reverse Transfer Capacitance C RSS - - 25 pF Thermal Resistance Junction to Case R θJC -- 1 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 1A - - 1.4 V Reverse Recovery Time t rr ISD = 1A, dISD /dt = 50A/µs - 150 - ns NOTE: 2. Pulse test: pulse width≤ 300µs maximum, duty cycle≤ 2%. RFL1N12, RFL1N15
FIGURE 12. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS