RFL1N10L INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 1A, 100V
  • r DS(ON) = 1.200Ω

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply volt- ages. Formerly developmental type TA09524. Symbol Packaging JEDEC TO-205AF

Ordering Information

RFL1N10L TO-205AF RFL1N10L NOTE: When ordering, use the entire part number. G D S DRAIN (CASE) SOURCE GATE September 1998 File Number 1510.3 RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207| Copyright © Intersil Corporation 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N10L UNITS Maximum Temperature for Soldering CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0 100 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA1 - 2 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS --1 µA VDS = 0.8 x Rated BVDSS , VDS = 80V, TC = 125oC -- 2 5 µA Gate to Source Leakage Current I GSS VGS =±10V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 1A, VGS = 5V (Figures 6, 7) - - 1.200 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = 1A, VGS = 5V - - 1.2 V Turn-On Delay Time t d(ON) ID ≈ 1A, VDD = 50V, RG = 6.25Ω , VGS = 5V, RL = 50Ω (Figures 10, 11, 12) -1 0 2 5 n s Rise Time t r -1 5 4 5 n s Turn-Off Delay Time t d(OFF) -2 5 4 5 n s Fall Time t f -3 0 5 0 n s Input Capacitance C ISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) - - 200 pF Output Capacitance C OSS - - 80 pF Reverse Transfer Capacitance C RSS - - 35 pF Thermal Resistance Junction to Case R θJC -- 1 5 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 1A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 2A, dISD /dt = 50A/µs - 100 - ns NOTES: 2. Pulse test: width ≤300µs duty cycle ≤2%. 3. Repetitive rating: pulse witdh limited by maximum junction temperature. RFL1N10L

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 RFL1N10L