RFH25P08

RFH25P08 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

• -25A, -100V and -80V
• r DS(ON) = 0.150Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Description

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Formerly developmental type TA49230. Symbol

Ordering Information

RFH25P08 TO-218AC RFH25P08 RFH25P10 TO-218AC RFH25P10 RFK25P08 TO-204AE RFK25P08 RFK25P10 TO-204AE RFK25P10 NOTE: When ordering, use the entire part number. D S G Packaging JEDEC TO -218AC JEDEC TO-204AE SOURCE DRAIN GATE DRAIN DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) September 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1632.1 RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, - 100V , - 80V , 0.150 Ohm, P- Channel Power MOS- FETs) /Author /Key- words (- 25A, - 100V a- 80V , 0.150 Ohm, P- Channel Power MOS- FETs) /Creator /DOCIN FO pdf- mark

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH25P08 RFK25P08 RFH25P10 RFK25P10 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFH25P08, RFK25P08 -80 - - V RFH25P10, RFK25P10 -100 - - V Gate Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA, (Figure 8) -2 - -4 V Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS , VGS = 0 - - -1 µA VDS = 0.8 x Rated BVDSS , VGS = 0, TC = 125oC - - -25 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) r DS(ON) ID = 25A, VGS = -10V, (Figures 6, 7) - - 0.150 Ω Drain to Source On Voltage (Note 2) V DS(ON) ID = -25A, VGS = -10V - - -3.75 V Turn-On Delay Time t d(ON) ID ≈ 12.5A, VDS = -50V, RGS = 50Ω, VGS = -10V, RL = 4.0Ω (Figures 10, 11, 12) -3 5 5 0n s Rise Time t r - 165 250 ns Turn-Off Delay Time t d(OFF) - 270 400 ns Fall Time t f - 165 250 ns Input Capacitance C ISS VGS = 0V, VDS = -25V, f = 1MHz (Figure 9) - - 3000 pF Output Capacitance C OSS - - 1500 pF Reverse-Transfer Capacitance C RSS - - 600 pF Thermal Resistance Junction to Case R θJC RFK25P08, RFK25P10 - - 0.83 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = -12.5A - - -1.4 V Diode Reverse Recovery Time t rr ISD = -4A, dISD /dt = 100A/µs - 300 - ns NOTES: 2. Pulse test: pulse width≤ 300µs, duty cycle≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFH25P08, RFH25P10, RFK25P08, RFK25P10