RFH10N45

RFH10N45 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

• 10A, 450V and 500V
• r DS(ON) = 0.600Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-218AC

Ordering Information

RFH10N45 TO-218AC RFH10N45 RFH10N50 TO-218AC RFH10N50 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN DRAIN GATE (FLANGE) Data Sheet October 1998 File Number 1629.2 [ /Title (RFH10 N45, RFH10N 50) /Subject (10A, 450V and 500V , 0.600 Ohm, N-Chan- nel Power MOS- FETs) /Author /Key- words (Harris Semi- conduc- tor, N-Chan- nel Power MOS- FETs, TO- 218AC) /Creator /DOCIN FO pdf- mark

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH10N45 RFH10N50 UNITS Maximum Temperature for Soldering 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V RFH10N45 450 V RFH10N50 500 V Gate to Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current I DSS VDS = Rated BVDSS --1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC- - 2 5 µA Gate to Source Leakage Current I GSS VGS =±20V, VDS = 0V - - ±100 nA Drain to Source On Voltage (Note 2) V DS(ON) ID = 10A, VGS = 10V - - 6.0 V Drain to Source On Resistance (Note 2) r DS(ON) ID = 10A, VGS = 10V (Figures 6, 7) - - 0.600 Ω Turn-On Delay Time t d(ON) ID ≈ 5A, VDS = 250V, RG = 50Ω , R L = 50Ω , VGS = 10V (Figures 10, 11, 12) -2 6 6 0n s Rise Time t r - 50 100 ns Turn-Off Delay Time t d(OFF) - 525 900 ns Fall Time t f - 105 180 ns Input Capacitance C ISS VGS = 0V, VDS = 25V f = 1MHz (Figure 9) - - 3000 pF Output Capacitance C OSS - - 600 pF Reverse Transfer Capacitance C RSS - - 200 pF Thermal Resistance, Junction to Case R θJC - - 0.83 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 10A - - 1.4 V Diode Reverse Recovery Time t rr ISD = 10A, dISD /dt = 100A/µs - 950 - ns NOTES: 2. Pulse Test: Pulse Width≤ 300µs, Duty Cycle≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFH10N45, RFH10N50S