RFG70N06 VBSEMI | Alldatasheet

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N-Channel 60 V (D-S) MOSFET

FEATURES

  • TrenchFET® power MOSFET
  • Packag e with low thermal resistance
  • 100 % Rg and UIS tested Notes a. Pa c kage limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.007 ID (A) 150 Configuratio n Single Package TO-247 D G SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO L LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID 150 A TC = 125 °C 88 Continuous Source Current (Diode Conduction) a IS 120 Pulsed Dra in Current b IDM 480 Single Pu lse Avalanche Current L = 0.1 mH IAS 65 Single Puls e Avalanche Energy EAS 211 mJ Maximum Powe r Dissipation b TC = 25 °C PD

175 W TC = 125 °C 56

g Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBO L LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 40 °C/WJunction-to-Case (Drain) RthJC 0.88 TO-247AC G D S RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

a. Pu ls e test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those l isted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMB OL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-So urce Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Ga te-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 On-State Drain Current a ID(on) V GS = 10 V VDS ≥ 5 V 120 - - A Drain-S ource On-State Resistance a RDS(on) VGS = 10 V ID = 30 A - 0.007 - ΩVGS = 10 V I D = 30 A, TJ = 125 °C - 0.010 - VGS = 10 V I D = 30 A, TJ = 175 °C - 0.013 Forwar d Transconductance b gfs VDS = 15 V, ID = 30 A - 94 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 5196 - pF Output Capacitance Coss - Rever se Transfer Capacitance Crss - Total Gate Charge c Qg VGS = 10 V V DS = 30 V, ID = 75 A nC Gate-Sou rce Charge c Qgs -2 4 . 6 - Gate-Drain Charge c Qgd -2 7 . 2 - Gate Resistance Rg f = 1 MHz 0.3 1 1.7 Ω Turn-On D elay Time c td(on) VDD = 30 V, RL = 0.4 Ω ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω -1 6 2 4 ns Rise T ime c tr -1 4 21 Turn-Of f Delay Time c td(off) -3 4 5 1 Fal l Time c tf -9 14 Source-Drain Di ode Ratings and Characteristics b Pulsed Current a ISM -- 4 8 0 A Fo rward Voltage VSD IF = 75 A, VGS = 0 - 0.9 1.5 V 710 - 340 - 97 - RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) Output Characteristics Tran sfer Characteristics On-Resistance vs. Drain Current Transfer Characteristics Transconductance Capacitance 100 125 150 175 200 225 0 4 8 12 16 20 ID - Drain Current (A) VDS -D r a in - t o -Source Voltage (V) VGS = 10 V thru 6 V VGS = 5 V VGS = 4V 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = -55 °CTC = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 20 40 60 80 100 120 RDS(on) -O n - Res istance (Ω) ID - Drain Current (A) VGS = 10 V 120 150 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = -55 °CTC = 125 °C TC = 25 °C 120 160 200 0 1 42 84 25 67 0 gfs -T r a nsconduct ance (S) ID - Drain Current (A) TC = 125 °C TC = -55 °C TC = 25 °C 2000 4000 6000 8000 10 000 0 10 20 30 40 50 60 C - Capacitance (pF) VDS -D r a in - t o -Source Voltage (V) Ciss Coss Crss RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

ARACTERISTICS (TA = 25 °C, unles s otherwise noted) Gate Charge Source Drain Diode Forward Voltage Threshol d Voltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) Qg -T o t al Gate Charge (nC) ID = 110 A VDS = 20 V 0.001 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C -1.8 -1.4 -1.0 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ -T e m p e r a t u r e (°C) ID = 250 μ A ID = 5 mA 0.6 0.9 1.2 1.5 1.8 2.1 -50 -25 0 25 50 75 100 125 150 175 RDS(on) -O n-Res istance(Normalized) TJ - Junction Temperature (°C) ID = 10 A VGS = 10 V 0.00 0.01 0.02 0.03 0.04 0.05 02468 1 0 RDS(on) -O n - Res istance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C -50 -25 0 25 50 75 100 125 150 175 VDS -D r a in - t o -Source Voltage (V) TJ - Junction Temperature (°C) ID = 10 mA RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Safe Oper ating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Curr ent (A) VDS - Drain- to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 100 ms, 1 s, 10 s, DC 10-4 10-3 10-2 10-1 1 10 100 1000 0.01 0.001 0.1 0.0001 Square Wave Pul se Duration (s) Normalized Effective Transient Thermal Impedance RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (TA = 25 °C, u nless otherwise noted) Normaliz ed Thermal Transient Impedance, Junction-to-Case Note

  • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycl e = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.05 Single Pulse 0.02 RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

MILLIMETERS INCHES MILLIMETE RS INCHES D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

0.10 A CM M

E E/2 (2) (4) R/2 B 2 x R S D See view B 2 x e b43 x b 2 x b2 LC 1 2 3 Q D A A A C Ø k B DM M A ØP (Datum B) ØP1

0.01 B DM M

(b1, b3, b5) Base metal (b, b2, b4) Section C - C, D - D, E - E (c) Planting Lead Assignments 1. Gate 2. Drain 3. Source Drain RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. RFG70N06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com