RFE-24M30M075X+

RFE-24M30M075X+ MINI | Alldatasheet

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50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output

APPLICATIONS

y Food processing (heating, tempering, and pasteurization) y Microwave-assisted chemistry y Plasma generation y Plasma surface treatment y Disinfection y Chemistry y RF-excited lasers y Medical (heating, hyperthermia, and ablation) y Semiconductor RF generators REV. OR ECO-014810 RFE-24M30M075X+ MCL NY 220013 THE BIG DEAL y One input, four 19W outputs y 27 MHz ISM band y Suitable for CW and pulsed signals y High gain, 16 dB typical at P3dB y 55% typical efficiency y Integrated harmonic suppression y T emperature compensated gate bias PRODUCT OVERVIEW The RFE-24M30M075X+ is a new generation light weight solid state connectorized power amplifier module. One input signal generates four equal output signals with a typical P 3dB of 19W each. The amplifier is intended as a driver for high power 27 MHz amplifiers, such as the RFE- 24M30M075X+. The RFE-24M30M075X+ can be used in a wide range of industrial, scientific and medical applications in the 27 MHz ISM band. The amplifier uses state-of-the-art high ruggedness semiconductor technology. The amplifier is capable of amplifying CW and pulsed signals. A temperature compensated gate bias circuit is provided. Mounting holes for an M3 screw are provided to mount the amplifier to a heatsink or cooling plate in larger systems. Easy screw-on power supply connections are provided outside the shield. Feature Advantages 75W CW Power Four equal channels with 19W output power (P3dB) for a wide range of industrial, scientific and medical applications in the 27 MHz ISM band. Designed to drive four RFE-24M30M1K7X+ amplifiers to create a generator with output power >5kW. High Gain With only 0.5W of input power and a typical gain of 16 dB at P3dB , only two amplifier stages are needed to generate 5kW. Harmonic Filtering Harmonic filtering inside this power amplifier ensures that the final stages receive a clean drive signal. Temperature Compensated Gate Bias A temperature compensated gate bias circuit is integrated in the PA. Easy interfacing Power supply connections are easily accessible outside the shield. Small and lightweight The compact amplifier design (202mm x 118mm x 28mm) is lightweight (608 g) which makes it suitable for integration in high power systems that require multiple amplifiers. Cooling The power amplifier can easily be mounted on a heatsink using the provided M3 mounting holes. Low voltage The RFE-24M30M075X+ operates over a large 50-66V supply voltage range. KEY FEATURES Model No. RFE-24M30M075X+ Case Style VU3196 Connectors 1 SMA INPUT/ 4 SMA OUTPUT Generic photo used for illustration purposes only

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output Parameter Symbol Conditions Min. Typ. Max. Units Frequency Range f 27.12 MHz Operating Voltage VDS 27.12 MHz 50 65 66 V Input Power PIN 27.12 MHz - 0.5 1.25 Watts - 27 31 dBm Output Power at 1dB compression P1dB

27.12 MHz 12 - - Watts

40.8 - - dBm Output Power at 3dB compression P3dB 27.12 MHz 13.5 - - Watts 41.3 - - dBm Power Gain Gp P3dB at 27.12MHz 13 - - dB Efficiency η P3dB at 27.12MHz 48 - - % Input VSWR P3dB at 27.12MHz - - 1.92 :1 Harmonics (H2 and H3) P3dB at 27.12MHz - -10 - dBc T est conditions: VDS=65V, IDQ=0.04A, f=27 .12 MHz, TMB=25°C, unless otherwise noted All power measurements are performed while using a Mini-Circuits NLP-30+ Low Pass Filter in front of the power sensors. MAXIMUM RATINGS1 Parameter Ratings Mounting Base Temperature2 0°C to +65°C Storage Temperature 0°C to +85°C DC Voltage 66V Input RF Power (no damage)3 +31 dBm 1. Specifications apply to CW signals only. Permanent damage may occur if any of these limits are exceeded. 2. Mounting Base T emperature is the T emperature of the Aluminum Base Plate. 3. CW of +31dBm for 5 minutes maximum ELECTRICAL SPECIFICATIONS PER CHANNEL AT T MOUNTING BASE = +25°C, VDS = 65V, 50Ω SYSTEM

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output OUTLINE DRAWING P Q 2X Ø.177 [Ø4.50] THRU Mounting Holes (Remove Shield Lid to Access) V 5X SMA-Female N M L K Y W J F H G R T S B C D E U A CASE # A B C D E F G H J K L M VU3196 8.486 (215.54) 7.969 (202.40) 7.027 (178.49) 4.660 (118.36) 4.528 (115.00) 1.110 (28.19) 0.310 (7.87) 0.280 (7.11) .560 (14.24) 3.708 (94.18) 2.724 (69.18) 1.936 (49.18) CASE # N P Q R S T U V W Y WEIGHT (GRAMS) VU3196 .952 (24.18) 2.151 (54.63) 2.330 (59.18) .586 (14.89) 4.070 (103.38) 3.330 (84.58) .534 (13.56) 1.924 (48.87) 2.212 (56.18) .560 (14.24) 608 P Q 2X Ø.177 [Ø4.50] THRU Mounting Holes (Remove Shield Lid to Access) V 5X SMA-Female N M L K Y W J F H G R T S B C D E U A CASE # A B C D E F G H J K L M VU3196 8.486 (215.54) 7.969 (202.40) 7.027 (178.49) 4.660 (118.36) 4.528 (115.00) 1.110 (28.19) 0.310 (7.87) 0.280 (7.11) .560 (14.24) 3.708 (94.18) 2.724 (69.18) 1.936 (49.18) CASE # N P Q R S T U V W Y WEIGHT (GRAMS) VU3196 .952 (24.18) 2.151 (54.63) 2.330 (59.18) .586 (14.89) 4.070 (103.38) 3.330 (84.58) .534 (13.56) 1.924 (48.87) 2.212 (56.18) .560 (14.24) 608 OUTLINE DIMENSIONS (Inch)mm

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output TYPICAL ELECTRICAL PERFORMANCE PER CHANNEL OF RFE-24M30M075X+ J3 +65V Supply Voltage Connector, M5 J4 Ground Connection,M5 Tightening Torque 1.7 N-m (15 in-lbs) with max. of 2.15 N-m (19 in-lbs) Mating Hardware*: M5 screw equivalent to McMaster P/N 92095A308 Belville washer equivalent to McMaster P/N 90895A027 Ring Terminal equivalent to McMaster P/N 7113K29 J1, J2, J6, J7, J8 - SMA Connector Receptacle, Female Socket 50Ohm Parameter Typical Performance (TMB = +25˚C) Unit Frequency 27 MHz Supply Voltage 65 V Total Input Power (PIN) 27 dBm CW Output Power (POUT @PIN) per Channel 42.8 dBm W19 Efficiency (@19W per channel) 51.3 % Gain (@19W per channel) 14.8 dB Current 2.3 A AMPLIFIER INTERFACES *Mating hardware not included with amplifier. Similar mating hardware available from other manufactures.

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output TYPICAL PERFORMANCE DATA PER CHANNEL AT 27 MHZ (TMOUNTING BASE = +25°C, VDS = 65V, 50Ω SYSTEM) TYPICAL PERFORMANCE DATA PER CHANNEL AT 27 MHZ ACROSS DIFFERENT MOUNTING BASEPLATE TEMPERATURE (VDS = 65V, 50Ω SYSTEM) POUT(W) PIN(W) POUT(W) vs PIN(W) 50V 55V 60V 65V 66V POUT(W) PIN(W) POUT(W) vs PIN(W) 10°C 25°C 65°C POUT(W) PIN (W) POUT(W) vs PIN (W) 25°C 0 2 4 6 8 10 12 14 16 18 20 22 Drain Efficiency(%) Power Gain (dB) POUT(W) Power Gain(dB) and Drain Efficiency(%) vs Pout(W) Power Gain 50V Power Gain 55V Power Gain 60V Power Gain 65V Power Gain 66V Drain Efficiency 50V Drain Efficiency 55V Drain Efficiency 60V Drain Efficiency 65V Drain Efficiency 66V 0 2 4 6 8 10 12 14 16 18 20 22 Drain Efficiency(%) Power Gain (dB) POUT(W) Power Gain (dB) and Drain Efficiency(%) vs POUT(W) Power Gain 10°C Power Gain 25°C Power Gain 65°C Drain Efficiency 10°C Drain Efficiency 25°C Drain Efficiency 65°C 0 2 4 6 8 10 12 14 16 18 20 22 Drain Efficiency(%) Power Gain (dB) POUT (W) Power Gain (dB) and Drain Efficiency(%) vs POUT(W) Power Gain 25°C Drain Efficiency 25°C TYPICAL PERFORMANCE DATA PER CHANNEL ACROSS DIFFERENT VOLTAGE RANGE AT 27 MHZ (TMOUNTING BASE = +25°C, 50Ω SYSTEM)

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output TYPICAL PERFORMANCE DATA PER CHANNEL AT 27 MHZ (TMOUNTING BASE = +25°C, VDS = 65V, 50Ω SYSTEM) TYPICAL PERFORMANCE DATA PER CHANNEL AT 27 MHZ ACROSS DIFFERENT MOUNTING BASEPLATE TEMPERATURE (VDS = 65V, 50Ω SYSTEM) TYPICAL PERFORMANCE DATA PER CHANNEL ACROSS DIFFERENT VOLTAGE RANGE AT 27 MHZ (TMOUNTING BASE = +25°C, 50Ω SYSTEM) 15 17 19 21 23 25 27 29 31 POUT(dBm) PIN(dBm) POUT(dBm) vs PIN(dBm) 50V 55V 60V 65V 66V 15 17 19 21 23 25 27 29 31 POUT(dBm) PIN (dBm) POUT(dBm) vs PIN (dBm) 10°C 25°C 65°C 15 17 19 21 23 25 27 29 31 POUT(dBm) PIN(dBm) POUT(dBm) vs PIN(dBm) 25°C 31 33 35 37 39 41 43 45 Drain Efficiency(%) Power Gain (dB) POUT(dBm) Power Gain(dB) and Drain Efficiency(%) vs POUT(dBm) Power Gain 50V Power Gain 55V Power Gain 60V Power Gain 65V Power Gain 66V Drain Efficiency 50V Drain Efficiency 55V Drain Efficiency 60V Drain Efficiency 65V Drain Efficiency 66V 32 34 36 38 40 42 44 Drain Efficiency(%) Power Gain (dB) POUT (dBm) Power Gain (dB) and Drain Efficiency(%) vs POUT(dBm) Power Gain 10°C Power Gain 25°C Power Gain 65°C Drain Efficiency 10°C Drain Efficiency 25°C Drain Efficiency 65°C 32 34 36 38 40 42 44 Drain Efficiency(%) Power Gain (dB) POUT(dBm) Power Gain (dB) and Drain Efficiency(%) vs POUT(dBm) Power Gain 25°C Drain Efficiency 25°C

50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output TYPICAL PERFORMANCE DATA PER CHANNEL (TMOUNTING BASE = +25°C, VDS = 65V, 50Ω SYSTEM) 15.6 15.8 16.2 16.4 16.6 16.8 24 25 26 27 28 29 30 Drain Efficiency (%) Power Gain (dB) Frequency (MHz) Power Gain (dB) and Drain Efficiency at P1dB Compression Power Gain @P1dB Drain Efficiency @P1dB 1.00 1.10 1.20 1.30 1.40 1.50 1.60 24 25 26 27 28 29 30 VSWR (:1) Frequency (MHz) Input VSWR (:1) at P1dB Compression VSWR(:1) 41.2 41.4 41.6 41.8 42.2 42.4 24 25 26 27 28 29 30 POUT (dBm) Frequency (MHz) POUT (dBm) at P1dB Compression Pout (dBm)

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard T erms”); Purchasers of this part are entitled to the rights PAGE 8 OF 8 RFE-24M30M075X+High Power Amplifier COAXIAL SOLID STATE 50Ω 4X 19W 27 MHz 1 SMA Input / 4 SMA Output TYPICAL PERFORMANCE DATA PER CHANNEL (TMOUNTING BASE = +25°C, VDS = 65V, 50Ω SYSTEM) 17.6 17.8 18.2 18.4 18.6 18.8 24 25 26 27 28 29 30 Drain Efficiency (%) Power Gain (dB) Frequency (MHz) Power Gain (dB) and Drain Efficiency(%) at P3dB Compression Power Gain @P3dB Drain Efficiency @P3dB 1.00 1.10 1.20 1.30 1.40 24 25 26 27 28 29 30 VSWR (:1) Frequency (MHz) Input VSWR (:1) at P3dB Compression VSWR (:1) 41.8 42.2 42.4 42.6 42.8 43.2 24 25 26 27 28 29 30 POUT(dBm) Frequency (MHz) POUT(dBm) at P3dB Compression Pout (dBm)