RFD14N05L

RFD14N05L UMW | Alldatasheet

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 Can be Driven Directly from CMOS, NMOS, and TTL Circuits  Peak Current vs Pulse Width Curve  175 ℃ Operating Temperature G D S October 2013 UMW R 60V N-Channel MOSFET VDS (V) = 60V Absolute Maximum Ratings TC = 25℃ , Unless Otherwise Specified Drain to Source Voltage (Note 1) V DSS 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) V DGR 60 V Gate to Source Voltage V GS ±10 V Continuous Drain Current I D Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve APulsed Avalanche R ating. EAS Refer to UIS Curve Power Dissipation PD Derate above 25oC 0.32W W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s L Package Body for 10s, See Techbrief 334 pkg 300 260 oC oC NOTE: 1. T J = 25oC to 150oC. www.umw-ic.com 1 UTD Semiconductor Co.,Limited T T R DS (ON) <100mΩ（ VGS = 5V）••

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Drain to Source On Resistance (Note 2) REle ctrical SpecificationsTC = 25℃ , Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V, Figure 13 60 V Gate Threshold Voltage V GS(TH) VGS = VDS, ID = 250µA, Figure12 1 2 V Zero Gate Voltage Drain Current I DSS VDS = 40V, VGS = 0V 1 µA VDS = 40V, VGS = 0V, TC = 150oC 50 µA Gate to Source Leakage Current I GSS VGS = ±10V ±100 nA DS(ON) ID = 14A, VGS = 5V, Figures 9, 11 100 Ω Turn-On Time t (ON) VDD = 25V, ID = 7A, RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω 60 ns Turn-On Delay Time t d(ON) 13 ns Rise Time t r 24 ns Turn-Off Delay Time t d(OFF) 42 ns Fall Time t f 16 ns Turn-Off Time t (OFF) 100 ns Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 40V, ID = 14A, RL = 2.86Ω Figures 20, 21 40 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V 25 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V 1.5 nC Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz Figure 14 670 pF Output Capacitance C OSS 185 pF Reverse Transfer Capacitance C RSS 50 pF Thermal Resistance Junction to Case R θJC 3.125 oC/W Thermal Resistance Junction to Ambient R θJA TO-252 100 oC/WSource to Drain Diode Sp ecifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) V SD ISD = 14A 1.5 V Diode Reverse Recovery Time t rr ISD = 14A, dISD/dt = 100A/µs 125 ns NOTES: 2. Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). www.umw-ic.com 2 UTD Semiconductor Co.,Limited m RFD14N05L October 2013 UMW R 60V N-Channel MOSFET

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

2.5 PULSE DURATION = 80µs

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

www.umw-ic.com 7 UTD Semiconductor Co.,Limited Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252M arkingOrdering information Order code Package Baseqty Deliverymode TO-252 2500 Tape and reel UMW RFD14N05LSM RFD14N05L October 2013 UMW R 60V N-Channel MOSFET